Datasheet AD822-EP (Analog Devices) - 4

HerstellerAnalog Devices
BeschreibungSingle-Supply, Rail-to-Rail Low Power FET-Input Op Amp
Seiten / Seite20 / 4 — AD822-EP. SPECIFICATIONS. Table 1. Grade. Parameter Test. …
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DokumentenspracheEnglisch

AD822-EP. SPECIFICATIONS. Table 1. Grade. Parameter Test. Conditions/Comments. Min. Typ. Max. Unit

AD822-EP SPECIFICATIONS Table 1 Grade Parameter Test Conditions/Comments Min Typ Max Unit

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AD822-EP SPECIFICATIONS
VS = 0 V, 5 V @ TA = 25°C, VCM = 0 V, VOUT = 0.2 V, unless otherwise noted.
Table 1. T Grade Parameter Test Conditions/Comments Min Typ Max Unit
DC PERFORMANCE Initial Offset 0.1 0.8 mV Maximum Offset Over Temperature 0.5 1.2 mV Offset Drift 2 μV/°C Input Bias Current VCM = 0 V to 4 V 2 25 pA At TMAX 0.5 6 nA Input Offset Current 2 20 pA At TMAX 0.5 nA Open-Loop Gain VOUT = 0.2 V to 4 V RL = 100 kΩ 500 1000 V/mV TMIN to TMAX 400 V/mV RL = 10 kΩ 80 150 V/mV TMIN to TMAX 80 V/mV RL = 1 kΩ 15 30 V/mV TMIN to TMAX 10 V/mV NOISE/HARMONIC PERFORMANCE Input Voltage Noise f = 0.1 Hz to 10 Hz 2 μV p-p f = 10 Hz 25 nV/√Hz f = 100 Hz 21 nV/√Hz f = 1 kHz 16 nV/√Hz f = 10 kHz 13 nV/√Hz Input Current Noise f = 0.1 Hz to 10 Hz 18 fA p-p f = 1 kHz 0.8 fA/√Hz Harmonic Distortion RL = 10 kΩ to 2.5 V f = 10 kHz VOUT = 0.25 V to 4.75 V −93 dB DYNAMIC PERFORMANCE Unity-Gain Frequency 1.8 MHz Full Power Response VOUT p-p = 4.5 V 210 kHz Slew Rate 3 V/μs Settling Time To 0.1% VOUT = 0.2 V to 4.5 V 1.4 μs To 0.01% VOUT = 0.2 V to 4.5 V 1.8 μs MATCHING CHARACTERISTICS Initial Offset 1.0 mV Maximum Offset Over Temperature 1.6 mV Offset Drift 3 μV/°C Input Bias Current 20 pA Crosstalk @ f = 1 kHz RL = 5 kΩ −130 dB Crosstalk @ f = 100 kHz RL = 5 kΩ −93 dB Rev. 0 | Page 4 of 20 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS CONNECTION DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE