Datasheet AD8065-KGD-CHIP (Analog Devices) - 3
| Hersteller | Analog Devices |
| Beschreibung | High Performance, 145 MHzFastFET Op Amps |
| Seiten / Seite | 8 / 3 — Known Good Die. AD8065-KGD-CHIP. SPECIFICATIONS. Table 1. Parameter. Test … |
| Dateiformat / Größe | PDF / 182 Kb |
| Dokumentensprache | Englisch |
Known Good Die. AD8065-KGD-CHIP. SPECIFICATIONS. Table 1. Parameter. Test Conditions/Comments. Min. Typ. Max. Status Unit
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Known Good Die AD8065-KGD-CHIP SPECIFICATIONS
VS = ±5 V at TA = 30°C, RL = 1 kΩ to midsupply, G = 1, unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 100 145 GBD1 MHz G = +2, VO = 0.2 V p-p 50 MHz G = +2, VO = 2 V p-p 42 MHz Bandwidth for 0.1 dB Flatness G = +2, VO = 0.2 V p-p 7 MHz Input Overdrive Recovery Time G = +1, −5.5 V to +5.5 V 175 ns Output Recovery Time G = −1, −5.5 V to +5.5 V 170 ns Slew Rate G = +2, VO = 4 V step 130 180 GBD1 V/µs Settling Time to 0.1% G = +2, VO = 2 V step 55 ns G = +2, VO = 8 V step 205 ns NOISE/HARMONIC PERFORMANCE SFDR fC = 1 MHz, G = +2, VO = 2 V p-p −88 dBc fC = 5 MHz, G = +2, VO = 2 V p-p −67 dBc fC = 1 MHz, G = +2, VO = 8 V p-p −73 dBc Third-Order Intercept fC = 10 MHz, RL = 100 Ω 24 dBm Input Voltage Noise f = 10 kHz 7 nV/√Hz Input Current Noise f = 10 kHz 0.6 fA/√Hz Differential Gain Error NTSC, G = +2, RL = 150 Ω 0.02 % Differential Phase Error NTSC, G = +2, RL = 150 Ω 0.02 Degrees DC PERFORMANCE Input Offset Voltage VCM = 0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 2 pA TMIN to TMAX 25 pA Input Offset Current 1 pA TMIN to TMAX 1 pA Open-Loop Gain VO = ±3 V, RL = 1 kΩ 100 113 Tested dB INPUT CHARACTERISTICS Common-Mode Input Impedance 1000 || 2.1 GΩ || pF Differential Input Impedance 1000 || 4.5 GΩ || pF Input Common-Mode Voltage Range FET Input Range −5 to +1.7 −5.0 to +2.4 GBD1 V Common-Mode Rejection Ratio VCM = −1 V to +1 V −85 −100 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ −4.88 to −4.94 to +4.95 Tested V +4.9 RL = 150 Ω −4.8 to +4.7 V Output Current VO = 9 V p-p, SFDR ≥ −60 dBc, 35 mA f = 500 kHz Short-Circuit Current 90 mA Capacitive Load Drive 30% overshoot G = +1 20 pF POWER SUPPLY Operating Range 5 24 Tested V Quiescent Current per Amplifier 6.4 7.2 Tested mA Power Supply Rejection Ratio VS ± 2 V −85 −100 Tested dB 1 GBD = Guaranteed By Design. Rev. 0 | Page 3 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
Known Good Die AD8065-KGD-CHIP SPECIFICATIONS
VS = ±5 V at TA = 30°C, RL = 1 kΩ to midsupply, G = 1, unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 100 145 GBD1 MHz G = +2, VO = 0.2 V p-p 50 MHz G = +2, VO = 2 V p-p 42 MHz Bandwidth for 0.1 dB Flatness G = +2, VO = 0.2 V p-p 7 MHz Input Overdrive Recovery Time G = +1, −5.5 V to +5.5 V 175 ns Output Recovery Time G = −1, −5.5 V to +5.5 V 170 ns Slew Rate G = +2, VO = 4 V step 130 180 GBD1 V/µs Settling Time to 0.1% G = +2, VO = 2 V step 55 ns G = +2, VO = 8 V step 205 ns NOISE/HARMONIC PERFORMANCE SFDR fC = 1 MHz, G = +2, VO = 2 V p-p −88 dBc fC = 5 MHz, G = +2, VO = 2 V p-p −67 dBc fC = 1 MHz, G = +2, VO = 8 V p-p −73 dBc Third-Order Intercept fC = 10 MHz, RL = 100 Ω 24 dBm Input Voltage Noise f = 10 kHz 7 nV/√Hz Input Current Noise f = 10 kHz 0.6 fA/√Hz Differential Gain Error NTSC, G = +2, RL = 150 Ω 0.02 % Differential Phase Error NTSC, G = +2, RL = 150 Ω 0.02 Degrees DC PERFORMANCE Input Offset Voltage VCM = 0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 2 pA TMIN to TMAX 25 pA Input Offset Current 1 pA TMIN to TMAX 1 pA Open-Loop Gain VO = ±3 V, RL = 1 kΩ 100 113 Tested dB INPUT CHARACTERISTICS Common-Mode Input Impedance 1000 || 2.1 GΩ || pF Differential Input Impedance 1000 || 4.5 GΩ || pF Input Common-Mode Voltage Range FET Input Range −5 to +1.7 −5.0 to +2.4 GBD1 V Common-Mode Rejection Ratio VCM = −1 V to +1 V −85 −100 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ −4.88 to −4.94 to +4.95 Tested V +4.9 RL = 150 Ω −4.8 to +4.7 V Output Current VO = 9 V p-p, SFDR ≥ −60 dBc, 35 mA f = 500 kHz Short-Circuit Current 90 mA Capacitive Load Drive 30% overshoot G = +1 20 pF POWER SUPPLY Operating Range 5 24 Tested V Quiescent Current per Amplifier 6.4 7.2 Tested mA Power Supply Rejection Ratio VS ± 2 V −85 −100 Tested dB 1 GBD = Guaranteed By Design. Rev. 0 | Page 3 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide