Datasheet AD8643-EP (Analog Devices) - 10 Hersteller Analog Devices Beschreibung Low Power, Rail-to-Rail, Output Precision JFET Amplifier Seiten / Seite 12 / 10 — AD8643-EP. 1000. VSY =. 13V. VS =. G = +100. GAIN = +5. 100. TS + (1%). … Dateiformat / Größe PDF / 255 Kb Dokumentensprache Englisch
AD8643-EP. 1000. VSY =. 13V. VS =. G = +100. GAIN = +5. 100. TS + (1%). TS + (0.1%). G (V. G = +10. P T. G = +1. TS – (0.1%). 0.1. –10. TS – (1%). 0.01. –15
Herunterladen PDF
Modelllinie für dieses Datenblatt Textversion des Dokuments AD8643-EP 1000 15 VSY = ±13V VS = ±13V G = +100 GAIN = +5 10 100 TS + (1%) ) 5 TS + (0.1%) 10 G (V ) IN ( ΩW T G = +10 0 S OU T Z U 1 P T G = +1 –5 OU TS – (0.1%) 0.1 –10 TS – (1%) 0.01 –15 01k 10k 100k 1M 10M 100M 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -027 -03 90FREQUENCY (Hz) 09590SETTLING TIME ( μs) 095 Figure 26. Output Impedance vs. Frequency Figure 29. Output Swing and Error vs. Settling Time1000 70 VSY = 5V VS = ±13V G = +100 R 60 L = 10k ΩVIN = 100mV p-p 100 AV = +1 50 ) % 10 ( ) T Ω40 O ( G = +10 O T OU SH OS– Z 30 1 G = +1 VER O OS+ 20 0.1 10 0.01 0 1k 10k 100k 1M 10M 100M 1 0281 10 100 1000 0- -03FREQUENCY (Hz) 590 0959CAPACITANCE (pF) 09 Figure 27. Output Impedance vs. Frequency Figure 30. Small Signal Overshoot vs. Load CapacitanceT 70 VSY = ±13V VS = ±2.5V R 60 L = 10k ΩVIN = 100mV p-p 1 AV = +1 VIN 50 ) % ( T 40 O OS– O SH 30 VER O OS+ 20 2 VOUT 10 0 CH1 10.0V CH2 10.0V M400 μs A CH1 1.00V -0291 10 100 1000 2T 0.00000s 590 -03 09CAPACITANCE (pF) 590 09 Figure 28. No Phase Reversal Figure 31. Small Signal Overshoot vs. Load Capacitance Rev. 0 | Page 10 of 12 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE