Datasheet MMBF4391, MMBF4392, MMBF4393 (ON Semiconductor) - 3

Values are at TA = 25°C unless otherwise noted. Symbol
PD
RθJA Parameter Max. Unit Total Device Dissipation 350 mW Derate Above 25°C 2.8 mW/°C Thermal Resistance, Junction-to-Ambient 357 °C/W Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics
V(BR)GSS
IGSS VGS(off)
VGS(f) ID(off) Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0
Gate Reverse Current Gate-Source Cut-Off Voltage
Gate-Source Forward Voltage Drain Cut-Off Leakage Current -30 VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 150°C
VDS = 20 V, ID = 1.0 nA V
-1.0 nA -0.2 μA MMBF4391 -4.0 -10.0 MMBF4392 -2.0 -5.0 MMBF4393 -0.5 -3.0 IG = 1.0 mA, VDS = 0 1.0 VDS = 20 V, VGS = -12 V MMBF4391 0.1 VDS = 20 V, VGS = -7.0 V MMBF4392 0.1 VDS = 20 V, VGS = -5.0 V MMBF4393 0.1 VDS = 20 V, VGS = -12 V,
TA = 150°C MMBF4391 0.2 VDS = 20 V, VGS = -7.0 V,
MMBF4392
TA = 150°C 0.2 VDS = 20 V, VGS = -5.0 V,
MMBF4393
TA = 150°C 0.2 V
V
nA μA On Characteristics
MMBF4391
IDSS VDS(on) rDS(on) Zero-Gate Voltage Drain
Current(4) Drain-Source On Voltage Drain-Source On Resistance VDS = 20 V, VGS = 0 50 150 MMBF4392 25 75 MMBF4393 5.0 30 ID = 12 mA, VGS = 0 MMBF4391 0.4 ID = 6.0 mA, VGS = 0 MMBF4392 0.4 ID = 3.0 mA, VGS = 0 MMBF4393 0.4 MMBF4391 30 ID = 1.0 mA, VGS = 0 MMBF4392 60 MMBF4393 100 mA V Ω Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% © 1997 Fairchild Semiconductor Corporation
MMBF4391 / MMBF4392 / MMBF4393 Rev. 1.3 www.fairchildsemi.com
2 MMBF4391 / MMBF4392 / MMBF4393 — N-Channel Switch Thermal Characteristics(3)