Datasheet MIC5021 (Microchip) - 7
| Hersteller | Microchip |
| Beschreibung | High-Speed, High-Side MOSFET Driver with Charge Pump and Overcurrent Limit |
| Seiten / Seite | 24 / 7 — MIC5021. 3.0. Note: TYPICAL PERFORMANCE CURVES |
| Revision | 12-09-2016 |
| Dateiformat / Größe | PDF / 1.5 Mb |
| Dokumentensprache | Englisch |
MIC5021. 3.0. Note: TYPICAL PERFORMANCE CURVES
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Textversion des Dokuments
MIC5021
3.0
Note: TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 2.5 1000 VIN = 0V 1.5 VGATE = VSUPPLY + 10V
CL = 1500pF (IRCZ34)
CBOOST = 0.01μF 950 tON 10V (ns) ISUPPLY (mA) 2.0 VIN = 5V 1.0 900
850 0.5 800 0.0 750 INCLUDES PROPAGATION DELAY 5 10 FIGURE 3-1:
Voltage. 15 20 25 30
VSUPPLY (V) 35 40 Supply Current vs. Supply 5 FIGURE 3-4:
Supply Voltage. 15 20 25 30
VSUPPLY (V) 35 40 Gate Turn-On Delay vs. 2.5 25
VG AT E = VG AT E – VS U P P L Y 20 2.0 15 1.5 tON (μs) VGATE (V) 10 10 VGATE = VSUPPLY + 4V
VSUPPLY = 12V 1.0 5 0.5 0 0.0
1x100 1x101 1x102 1x103 1x104 1x105
CGATE (pF) INCLUDES PROPAGATION DELAY 5 10 FIGURE 3-2:
Supply Voltage. 15 20 25 30
VSUPPLY (V) 35 40 Gate Voltage Change vs. 2000 900 VGATE = VSUPPLY + 4V
CL = 1500pF (IRCZ34)
CBOOST = 0.01μF 1750 VG AT E = VSUPPLY + 4V
RL = 400 tOFF 4V (ns) 850
tON 4V (ns) FIGURE 3-5:
Gate Turn-On Delay vs.
Gate Capacitance. 1500 800 CG AT E = 1500pF
(IRCZ34) 1250 750
INCLUDES PROPAGATION DELAY 1000 700 INCLUDES PROPAGATION DELAY 650 5 FIGURE 3-3:
Supply Voltage. 10 15 20 25 30
VSUPPLY (V) 35 40 Gate Turn-On Delay vs. 2016 Microchip Technology Inc. 750
5 FIGURE 3-6:
Supply Voltage. 10 15 20 25 30
VSUPPLY (V) 35 40 Gate Turn-Off Delay vs. DS20005677A-page 7
3.0
Note: TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 2.5 1000 VIN = 0V 1.5 VGATE = VSUPPLY + 10V
CL = 1500pF (IRCZ34)
CBOOST = 0.01μF 950 tON 10V (ns) ISUPPLY (mA) 2.0 VIN = 5V 1.0 900
850 0.5 800 0.0 750 INCLUDES PROPAGATION DELAY 5 10 FIGURE 3-1:
Voltage. 15 20 25 30
VSUPPLY (V) 35 40 Supply Current vs. Supply 5 FIGURE 3-4:
Supply Voltage. 15 20 25 30
VSUPPLY (V) 35 40 Gate Turn-On Delay vs. 2.5 25
VG AT E = VG AT E – VS U P P L Y 20 2.0 15 1.5 tON (μs) VGATE (V) 10 10 VGATE = VSUPPLY + 4V
VSUPPLY = 12V 1.0 5 0.5 0 0.0
1x100 1x101 1x102 1x103 1x104 1x105
CGATE (pF) INCLUDES PROPAGATION DELAY 5 10 FIGURE 3-2:
Supply Voltage. 15 20 25 30
VSUPPLY (V) 35 40 Gate Voltage Change vs. 2000 900 VGATE = VSUPPLY + 4V
CL = 1500pF (IRCZ34)
CBOOST = 0.01μF 1750 VG AT E = VSUPPLY + 4V
RL = 400 tOFF 4V (ns) 850
tON 4V (ns) FIGURE 3-5:
Gate Turn-On Delay vs.
Gate Capacitance. 1500 800 CG AT E = 1500pF
(IRCZ34) 1250 750
INCLUDES PROPAGATION DELAY 1000 700 INCLUDES PROPAGATION DELAY 650 5 FIGURE 3-3:
Supply Voltage. 10 15 20 25 30
VSUPPLY (V) 35 40 Gate Turn-On Delay vs. 2016 Microchip Technology Inc. 750
5 FIGURE 3-6:
Supply Voltage. 10 15 20 25 30
VSUPPLY (V) 35 40 Gate Turn-Off Delay vs. DS20005677A-page 7