Datasheet LT1158 (Analog Devices) - 5

HerstellerAnalog Devices
BeschreibungHalf Bridge N-Channel Power MOSFET Driver
Seiten / Seite22 / 5 — TYPICAL PERFORMANCE CHARACTERISTICS. Current Limit Inhibit VDS Threshold. …
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TYPICAL PERFORMANCE CHARACTERISTICS. Current Limit Inhibit VDS Threshold. Bottom Gate Rise Time. Bottom Gate Fall Time

TYPICAL PERFORMANCE CHARACTERISTICS Current Limit Inhibit VDS Threshold Bottom Gate Rise Time Bottom Gate Fall Time

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LT1158
TYPICAL PERFORMANCE CHARACTERISTICS Current Limit Inhibit VDS Threshold Bottom Gate Rise Time Bottom Gate Fall Time
1.50 400 400 1.45 V2 – V11 350 350 1.40 300 300 C 1.35 GATE = 10000pF C 250 GATE = 10000pF 250 1.30 –40°C 1.25 200 200 +25°C 1.20 +85°C 150 CGATE = 3000pF 150 CGATE = 3000pF 1.15 100 100 1.10 BOTTOM GATE RISE TIME (ns) BOTTOM GATE FALL TIME (ns) CGATE = 1000pF 50 50 1.05 CGATE = 1000pF CURRENT LIMIT INHIBIT THRESHOLD (V) 1.00 0 0 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) LT1158 G10 LT1158 G11 LT1158 G12
Top Gate Rise Time Top Gate Fall Time Transition Times vs RGate
400 400 800 V+ = 12V 350 350 700 CGATE = 3000pF C 300 GATE = 10000pF 300 600 CGATE = 10000pF 250 250 500 RISE TIME 200 200 400 CGATE = 3000pF CGATE = 3000pF FALL TIME 150 150 300 TOP GATE RISE TIME (ns) 100 TOP GATE FALL TIME (ns) 100 TRANSITION TIMES (ns) 200 C C GATE = 1000pF GATE = 1000pF 50 50 100 0 0 0 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) GATE RESISTANCE (Ω) LT1158 G13 LT1158 G14 LT1158 G15 1158fb 5