Datasheet 2N6660 (Microchip) - 3
| Hersteller | Microchip |
| Beschreibung | 60V, 3 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET |
| Seiten / Seite | 10 / 3 — 2N6660. THERMAL CHARACTERISTICS. ID(1. Power. Package. continuous. … |
| Dateiformat / Größe | PDF / 463 Kb |
| Dokumentensprache | Englisch |
2N6660. THERMAL CHARACTERISTICS. ID(1. Power. Package. continuous. pulsed. Dissipation. DR(1. DRM. (mA). (A). @TA = 25°C (W). Note 1:
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2N6660 THERMAL CHARACTERISTICS ID(1 ) ID Power I I Package continuous pulsed Dissipation DR(1 ) DRM (mA) (A) (mA) (A) @TA = 25°C (W)
TO-39 410 3.0 6.25 410 3.0
Note 1:
ID (continuous) is limited by max rated TJ.
Product Summary
BVDSX/BVDGS RDS(ON) IDSS (V) (max) (Ω) (min) (A) 60 3.0 1.5
2.0 PIN DESCRIPTION
The locations of the pins are listed in Package Types and Packaging Information.
TABLE 2-1: PIN DESCRIPTION Pin # TO-39 Function
1 SOURCE 2 GATE 3 DRAIN 2016 Microchip Technology Inc. DS20005509A-page 3 Document Outline 1.0 Electrical Characteristics 2.0 Pin Description TABLE 2-1: Pin Description 3.0 Functional Description FIGURE 3-1: Switching Waveforms and Test Circuit 4.0 Packaging Information 4.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Cleveland Dallas Detroit Houston, TX Indianapolis Los Angeles New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Asia Pacific Office Hong Kong Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Wuhan China - Xian ASIA/PACIFIC China - Xiamen China - Zhuhai India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok EUROPE Austria - Wels Denmark - Copenhagen France - Paris Germany - Dusseldorf Germany - Karlsruhe Germany - Munich Italy - Milan Italy - Venice Netherlands - Drunen Poland - Warsaw Spain - Madrid Sweden - Stockholm UK - Wokingham
2N6660 THERMAL CHARACTERISTICS ID(1 ) ID Power I I Package continuous pulsed Dissipation DR(1 ) DRM (mA) (A) (mA) (A) @TA = 25°C (W)
TO-39 410 3.0 6.25 410 3.0
Note 1:
ID (continuous) is limited by max rated TJ.
Product Summary
BVDSX/BVDGS RDS(ON) IDSS (V) (max) (Ω) (min) (A) 60 3.0 1.5
2.0 PIN DESCRIPTION
The locations of the pins are listed in Package Types and Packaging Information.
TABLE 2-1: PIN DESCRIPTION Pin # TO-39 Function
1 SOURCE 2 GATE 3 DRAIN 2016 Microchip Technology Inc. DS20005509A-page 3 Document Outline 1.0 Electrical Characteristics 2.0 Pin Description TABLE 2-1: Pin Description 3.0 Functional Description FIGURE 3-1: Switching Waveforms and Test Circuit 4.0 Packaging Information 4.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Cleveland Dallas Detroit Houston, TX Indianapolis Los Angeles New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Asia Pacific Office Hong Kong Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Wuhan China - Xian ASIA/PACIFIC China - Xiamen China - Zhuhai India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok EUROPE Austria - Wels Denmark - Copenhagen France - Paris Germany - Dusseldorf Germany - Karlsruhe Germany - Munich Italy - Milan Italy - Venice Netherlands - Drunen Poland - Warsaw Spain - Madrid Sweden - Stockholm UK - Wokingham