Datasheet LND250 (Microchip) - 2

LND250 Thermal CharacteristicsI I Power Dissipation † Package D D θ I I (continuous)† (pulsed) @T = 25OC ja DR DRM A (mA) (mA) (W) (OC/W) (mA) (mA)
TO-236AB (SOT-23) 13 30 0.36 203 13 30
Notes:
† I (continuous) is limited by max rated T. D j
Electrical Characteristics
(T = 25OC unless otherwise specified) A
Sym Parameter Min Typ Max Units Conditions
BV Drain-to-source breakdown voltage 500 - - V V = -10V, I = 1.0mA DSX GS D V Gate-to-source off voltage -1.0 - -3.0 V V = 25V, I = 100nA GS(OFF) GS D ΔV Change in V with temperature - - 5.0 mV/OC V = 25V, I = 100nA GS(OFF) GS(OFF) GS D I Gate body leakage current - - 100 nA V = ± 20V, V = 0V GSS GS DS - - 100 nA V = -10V, V = 450V GS DS I Drain-to-source leakage current D(OFF) - - 100 µA V = 0.8V Max Rating, DS V = -10V, T = 125OC GS A I Saturated drain-to-source current 1.0 - 3.0 mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - 850 1000 Ω V = 0V, I = 0.5mA DS(ON) GS D ΔR Change in R with temperature - - 1.2 %/OC V = 0V, I = 0.5mA DS(ON) DS(ON) GS D G Forward transductance 1.0 2.0 - mmho V = 0V, I = 1.0mA FS DS D C Input capacitance - 7.5 10 ISS V = -10V, GS C Common source output capacitance - 2.0 3.5 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 0.5 1.0 RSS t Turn-on delay time - 0.09 - d(ON) V = 25V, t Rise time - 0.45 - DD r µs I = 1.0mA, D t Turn-off delay time - 0.1 - d(OFF) R = 25Ω GEN t Fall time - 1.3 - f V Diode forward voltage drop - - 0.9 V V = -10V, I = 1.0mA SD GS SD t Reverse recovery time - 200 - ns V = -10V, I = 1.0mA rr GS SD
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 0V
90%
VDD INPUT Pulse
R 10%
Generator
L
-10V OUTPUT
t t (ON) (OFF) RGEN t t t t d(ON) r d(OFF) f
VDD INPUT
10% 10%
D.U.T. OUTPUT 0V
90% 90% Doc.# DSFP-LND250
Supertex inc.
B012314 2
www.supertex.com