Datasheet DN2625 (Microchip) - 2

HerstellerMicrochip
BeschreibungN-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options
Seiten / Seite14 / 2 — DN2625. 1.0. ELECTRICAL CHARACTERISTICS. Absolute Maximum Ratings†. Note …
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DN2625. 1.0. ELECTRICAL CHARACTERISTICS. Absolute Maximum Ratings†. Note 1. Notice:. Note 1:. DC ELECTRICAL CHARACTERISTICS

DN2625 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Note 1 Notice: Note 1: DC ELECTRICAL CHARACTERISTICS

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DN2625 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings†
Drain-to-source Voltage ... BVDSX Drain-to-gate Voltage .. BVDGX Gate-to-source Voltage ... ±20V Operating Ambient Temperature, TA ... –55°C to 150°C Storage Temperature, TS ... –55°C to 150°C Soldering Temperature (
Note 1
) ... 300°C
Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.
Note 1:
Distance of 1.6 mm from case for 10 seconds
DC ELECTRICAL CHARACTERISTICS Electrical Specifications:
Unless otherwise noted, TA = 25°C. (
Note 1
)
Parameter Sym. Min. Typ. Max. Unit Conditions
Drain-to-source Breakdown Voltage BVDSX 250 — — V VGS = –2.5V, ID = 50 µA Drain-to-gate Breakdown Voltage BVDGX 250 — — V VGS = –2.5V, ID = 50 µA Gate-to-source Off Voltage VGS(OFF) –1.5 — –2.1 V VDS = 15V, ID = 100 µA Change in VGS(OFF) ∆VGS(OFF) — — –4.5 mV/°C VDS = 15V, ID = 100 µA (
Note 2
) with Temperature Gate Body Leakage Current IGSS — — 100 nA VGS = ±20V, VDS = 0V — — 1 VDS = 250V, VGS = –5V Drain-to-source Leakage Current ID(OFF) µA — — 200 VDS = 250V, VGS = –5V,  TA = 125°C (
Note 2
) Saturated Drain-to-source Current IDSS 1.1 — — A VGS = 0V, VDS = 15V Pulsed Drain-to-source Current IDS(PULSE) 3.1 3.3 — A VGS = 0.9V, VDS = 15V (With duty cycle of 1%) Static Drain-to-source On-resistance RDS(ON) — — 3.5 Ω VGS = 0V, ID = 1A Change in RDS(ON) with ∆ Temperature RDS(ON) — — 1.1 %/°C VGS = –0V, ID = 200 mA (
Note 2
)
Note 1:
Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty cycle.
2:
Specification is obtained by characterization and is not 100% tested. DS20005537B-page 2  2017 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics Absolute Maximum Ratings† Temperature Specifications Thermal characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transfer Characteristics. FIGURE 2-3: Saturation Characteristics. FIGURE 2-4: BVDSX Variation with Temperature. FIGURE 2-5: On-resistance vs. Drain Current. FIGURE 2-6: VGS(OFF) and RDS(ON) Variation with Temperature. FIGURE 2-7: Transconductance vs. Drain Current. 3.0 Pin Description TABLE 3-1: TO-252 D-PAK Pin Function Table TABLE 3-2: 8-lead DFN (dual Pad) Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. Product Summary 5.0 Packaging Information 5.1 Package Marking Information