Datasheet DN2540 (Microchip) - 3
| Hersteller | Microchip |
| Beschreibung | N-Channel Depletion-Mode Vertical DMOS FETs Features |
| Seiten / Seite | 8 / 3 — DN2540. Electrical Characteristics. Sym. Parameter. Min. Typ. Max. Units. … |
| Dateiformat / Größe | PDF / 867 Kb |
| Dokumentensprache | Englisch |
DN2540. Electrical Characteristics. Sym. Parameter. Min. Typ. Max. Units. Conditions. Notes:. Switching Waveforms and Test Circuit. VDD. INPUT
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DN2540 Electrical Characteristics
(cont.)
Sym Parameter Min Typ Max Units Conditions
t Turn-on delay time - - 10 d(ON) V = 25V, t Rise time - - 15 DD r ns I = 150mA, D t Turn-off delay time - - 15 d(OFF) R = 25Ω, GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = -10V, I = 120mA SD GS SD t Reverse recovery time - 800 - ns V = -10V, I = 1.0A rr GS SD
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 0V
90%
VDD INPUT Pulse
R 10%
Generator
L
-10V OUTPUT
t t (ON) (OFF) RGEN t t t t d(ON) r d(OFF) f
VDD INPUT
10% 10%
D.U.T. OUTPUT 0V
90% 90% Doc.# DSFP-DN2540
Supertex inc.
B060313 3
www.supertex.com
(cont.)
Sym Parameter Min Typ Max Units Conditions
t Turn-on delay time - - 10 d(ON) V = 25V, t Rise time - - 15 DD r ns I = 150mA, D t Turn-off delay time - - 15 d(OFF) R = 25Ω, GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = -10V, I = 120mA SD GS SD t Reverse recovery time - 800 - ns V = -10V, I = 1.0A rr GS SD
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 0V
90%
VDD INPUT Pulse
R 10%
Generator
L
-10V OUTPUT
t t (ON) (OFF) RGEN t t t t d(ON) r d(OFF) f
VDD INPUT
10% 10%
D.U.T. OUTPUT 0V
90% 90% Doc.# DSFP-DN2540
Supertex inc.
B060313 3
www.supertex.com