Datasheet DN2530 (Microchip) - 2

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DN2530 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage ...BVDSX Drain-to-gate voltage...BVDGX Gate-to-source voltage.. ±20V Operating and Storage Temperature.. -55 to 150 °C
† Notice:
Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
DC AND AC CHARACTERISTICS Electrical Specifications:
Unless otherwise specified, for all specifications TA = +25°C
Parameter Symbol Min Typ Max Units Conditions DC Parameters
(
Note 1 ,
unless otherwise stated) Drain-to-source breakdown voltage BVDSX 300 - - V VGS= -5.0V, ID= 100 µA Gate-to-source off voltage VGS(OFF) -1.0 - -3.5 V VDS= 25V, ID= 10 µA VGS(OFF) change with temperature ∆VGS(OFF) - - -4.5 mV/°C VDS= 25V, ID= 10 µA(
Note 2
) Gate body leakage current IGSS - - 100 nA VGS= ±20V, VDS= 0V - - 10 µA VDS= Max rating, VGS= -10V Drain-to-source leakage current ID(OFF) V - - 1.0 mA DS= 0.8 Max Rating, VGS= -10V, TA= 125°C (
Note 2
) Saturated drain-to-source current IDSS 200 - - mA VGS= 0V, VDS= 25V Static drain-to-source on-state R resistance DS(ON) - - 12 Ω VGS= 0V, ID= 150 mA Change in RDS(ON) with temperature ∆RDS(ON) - - 1.1 %/°C VGS= 0V, ID= 150 mA(
Note 2
)
AC Parameters
(
Note 2
) Forward transconductance GFS 300 - - mmho VDS= 10V, ID= 150 mA Input capacitance CISS - - 300 VGS= -10V, Common source output capacitance C pF V OSS - - 30 DS= 25V, f = 1 MHz Reverse transfer capacitance CRSS - - 5 Turn-on delay time td(ON) - - 10 V Rise time t DD= 25V, r - - 15 ns ID= 150 mA, Turn-off delay time td(OFF) - - 15 RGEN= 25Ω, Fall time tf - - 20
Diode Parameters
V Diode forward voltage drop V GS = -10V, ISD= 150 mA SD – – 1.8 V
(Note 1 )
Reverse recovery time trr – 600 – ns VGS = -10V, ISD= 1.0A (
Note 2) Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2:
Specification is obtained by characterization and is not 100% tested. DS20005451A-page 2  2016 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 2.0 Pin Description TABLE 2-1: Pin Description 3.0 Functional Description FIGURE 3-1: Switching Waveforms and Test Circuit FIGURE 3-2: Typical Performance Curves FIGURE 3-3: Typical Performance Curves (continued) 4.0 Packaging Information 4.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Cleveland Dallas Detroit Houston, TX Indianapolis Los Angeles New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Asia Pacific Office Hong Kong Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Wuhan China - Xian ASIA/PACIFIC China - Xiamen China - Zhuhai India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok EUROPE Austria - Wels Denmark - Copenhagen France - Paris Germany - Dusseldorf Germany - Karlsruhe Germany - Munich Italy - Milan Italy - Venice Netherlands - Drunen Poland - Warsaw Spain - Madrid Sweden - Stockholm UK - Wokingham