Datasheet TC1320 (Microchip) - 3

HerstellerMicrochip
Beschreibung8-Bit Digital-to-Analog Converter with Two-Wire Interface
Seiten / Seite16 / 3 — TC1320. 1.0. ELECTRICAL. CHARACTERISTICS. Absolute Maximum Ratings*. …
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TC1320. 1.0. ELECTRICAL. CHARACTERISTICS. Absolute Maximum Ratings*. TC1320 ELECTRICAL SPECIFICATIONS. Electrical Characteristics:

TC1320 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* TC1320 ELECTRICAL SPECIFICATIONS Electrical Characteristics:

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TC1320 1.0 ELECTRICAL
*Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These
CHARACTERISTICS
are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the
Absolute Maximum Ratings*
operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for Supply Voltage (VDD) ...+6V extended periods may affect device reliability. Voltage on any Pin .. (GND – 0.3V) to (VDD + 0.3V) Current on any Pin .. ±50mA Package Thermal Resistance (JA).. 330°C C/W Operating Temperature (TA).. See Below Storage Temperature (TSTG) .. -65°C to +150°C
TC1320 ELECTRICAL SPECIFICATIONS Electrical Characteristics:
VDD = 2.7V to 5.5V, -40°C  TA  +85°C, VREF = 1.2V unless otherwise noted.
Symbol Parameter Min Typ Max Unit Test Conditions Power Supply
VDD Supply Voltage 2.7 350 500 A IDD Operating Current — 0.35 0.5 mA VDD = 5.5V, VREF = 1.2V Serial Port Inactive
(Note 1)
IDD-STANDBY Standby Supply Current — 0.1 1 A VDD = 3.3V Serial Port Inactive
(Note 1) Static Performance - Analog Section
Resolution — — 8 Bits INL Integral Non-Linearity at FS, TA = +25°C — — ±2 LSB
(Note 2)
FSE Full Scale Error — — ±3 %FS DNL Differential Non-Linearity, TA = +25°C — — ±0.8 LSB All Codes
(Note 2)
VOS Offset Error at VOUT — ±0.3 ±8 mV
(Note 2)
TCVOS Offset Error Tempco at VOUT — 10 — v/°C PSRR Power Supply Rejection Ratio — 80 — dB VDD at DC VREF Voltage Reference Range 0 — VDD – 1.2 V IREF Reference Input Leakage Current — — ±1.0 A VSW Voltage Swing 0 — VREF V VREF  (VDD – 1.2V) ROUT Output Resistance @ VOUT — 5 — ROUT () IOUT Output Current (Source or Sink) — 2 — mA ISC Output Short-Circuit Current — 30 50 mA Source VDD = 5.5V — 20 50 mA Sink
Dynamic Performance
SR Voltage Output Slew Rate — 0.8 — V/s tSETTLE Output Voltage Full Scale Settling Time — 10 — sec tWU Wake-up Time — 20 — s Digital Feed Through and Crosstalk — 5 — nV-s SDA = VDD, SCL = 100kHz
Serial Port Interface
VIH Logic Input High 2.4 — VDD V VIL Logic Input Low — — 0.6 — VOL SDA Output Low — — 0.4 V IOL = 3mA (Sinking Current) — — 0.6 V IOL = 6mA CIN Input Capacitance SDA, SCL — 5 0.4 pF ILEAK I/O Leakage — — ±1.0 A
Note 1:
SDA and SCL must be connected to VDD or GND.
2:
Measured at VOUT 50mV referred to GND to avoid output buffer clipping.  2002-2012 Microchip Technology Inc. DS21386C-page 3