Datasheet AD8634-KGD (Analog Devices) - 4

AD8634-KGD Known Good Die ELECTRICAL CHARACTERISTICS, VSY = 5.0 V
VSY = 5.0 V, VCM = 2.5 V, VOUT = 2.5 V, TMIN ≤ TA ≤ TMAX, unless otherwise noted.
Table 2. −40°C ≤ TA ≤ +210°C Parameter Symbol Test Conditions/ Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 250 μV Offset Voltage Drift ΔVOS/ΔT 0.35 μV/°C Offset Voltage Matching TA = TMAX 150 μV Input Bias Current IB −200 −40 +200 nA Input Offset Current IOS 30 nA Input Voltage Range VIN 0.5 4.7 V Common-Mode Rejection Ratio CMRR VCM = 0.3 V to 4.7 V 55 60 dB Large Signal Voltage Gain AVO 0.5 V ≤ VOUT ≤ 4.7 V, RL = 2 kΩ 100 108 dB Input Impedance Differential 53||1.1 kΩ||pF Common-Mode 2.8||2.5 GΩ||pF OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ to VCM 4.8 4.90 V RL = 2 kΩ to VCM 4.0 4.5 V RL = 2 kΩ to VCM, TA = TMAX 4.60 4.75 V Output Voltage Low VOL RL = 10 kΩ to VCM 50 200 mV RL = 2 kΩ to VCM 250 350 mV RL = 2 kΩ to VCM, TA = TMAX 350 mV Short-Circuit Current ISC VOUT = 0 V, TA = TMAX +70/−11 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = ±1.25 V to ±2.75 V 95 100 dB Supply Current per Amplifier ISY IOUT = 0 mA, TA = TMAX 1.0 1.2 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 3.5 5.0 V/µs Gain Bandwidth Product GBP VIN = 5 mV p-p, RL = 10 kΩ, 9.7 MHz AV = 100 Unity-Gain Crossover UGC VIN = 5 mV p-p, RL = 10 kΩ, AV = 1 7.0 MHz −3 dB Closed-Loop Bandwidth −3dB VIN = 5 mV p-p, AV = 1 11.0 MHz Phase Margin ΦM 82 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.13 µV p-p Voltage Noise Density en f = 1 kHz 4.2 nV/√Hz Current Noise Density in 0.6 pA/√Hz Rev. 0 | Page 4 of 7 Document Outline Features Applications Metal Mask Die Image General Description Table of Contents Revision History Specifications Electrical Characteristics, VSY = ±15.0 V Electrical Characteristics, VSY = 5.0 V Absolute Maximum Ratings ESD Caution Pad Configuration And Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide