Datasheet HMC1020 (Analog Devices) - 4

HerstellerAnalog Devices
BeschreibungRMS Power Detector SMT, Single-Ended, DC - 3.9 GHz
Seiten / Seite25 / 4 — HMC1020LP4E. RMS POWER DETECTOR. SINGLE-ENDED, DC - 3.9 GHz. Typical …
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HMC1020LP4E. RMS POWER DETECTOR. SINGLE-ENDED, DC - 3.9 GHz. Typical Applications. Features. Functional Diagram

HMC1020LP4E RMS POWER DETECTOR SINGLE-ENDED, DC - 3.9 GHz Typical Applications Features Functional Diagram

Textversion des Dokuments

HMC1020LP4E
v02.0511
RMS POWER DETECTOR SINGLE-ENDED, DC - 3.9 GHz Typical Applications Features
Broadband single-ended rF Input the HMc1020LP4e is ideal for: ±1 dB Detection Accuracy to 3.9 GHz • Log –> Root-Mean-Square (RMS) Conversion Input Dynamic range: -65 dBm to +7 dBm • Tx/Rx Signal Strength Indication (TSSI/RSSI) rF signal wave shape & crest Factor Independent • RF Power Amplifier Efficiency Control Digital y Programmable Integration Bandwidth • Receiver Automatic Gain Control excellent temperature stability • Transmitter Power Control Power-Down Mode 11 24 Lead 4x4mm sMt Package: 16mm² t M
Functional Diagram General Descriptions
s the HMc1020LP4e Power Detector is designed for - rF power measurement and control applications for frequencies up to 3.9 GHz. the detector provides rs an accurate rMs representation of any broadband, o single-ended rF/IF input signal. the output is a tem- t perature compensated, monotonic representation of c real signal power, measured with an input sensing e range of 72 dB. t e the HMc1020LP4e is ideal y suited to those wide bandwidth, wide dynamic range applications requir- D ing repeatable measurement of real signal power, r especial y where rF/IF wave shape and/or crest factor e change with time. w the integration bandwidth of the HMc1020LP4e is o digital y programmable with the use of input pins P scI1-4 over a range of more than 3 decades. this al ows the user to dynamical y set the operation bandwidth and also permits the detection of different types of modulations on the same platform. HMc1020LP4e features an internal op-amp at the out- put stage, which provides for slope / intercept adjust- ments and enables control er application.
Electrical Specifications I
TA = +25 °C, Vcc = 5V, Sci4 = Sci1 = 0V, Sci3 = Sci2 = 5V, Unless Otherwise Noted Parameter typ. typ. typ. typ. typ. typ. typ. Units
Dynamic Range
(±1dB Error) [1] Input Frequency 100 900 1900 2200 2700 3500 3900 MHz Single Ended Input Configuration 72 72 71 70 66 58 53 dB
Deviation vs Temperature:
(Over full temperature range -40 °C to 85 °C). 1 dB Deviation is measured from reference, which is the same WCDMA input at 25 °C. [1] With WCDMA 4 Carrier (TMI1-64 DPCH) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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Application Support: Phone: 978-250-3343 or apps@hittite.com Document Outline Typical Applications Features Functional Diagram General Descriptions Electrical Specifications I Electrical Specifications II RMSOUT vs. Pin with Different Modulations @ 1900 MHz RMSOUT Error vs. Pin with Different Modulations @ 1900 MHz Electrical Specifications III Typical Performance Characteristics RMSOUT & Error vs. Pin @ 100 MHz RMSOUT & Error vs. Pin @ 900 MHz RMSOUT & Error vs. Pin @ 1900 MHz RMSOUT & Error vs. Pin @ 2200 MHz RMSOUT & Error vs. Pin @ 2700 MHz RMSOUT & Error vs. Pin @ 3500 MHz RMSOUT & Error vs. Pin @ 3900 MHz Intercept vs. Frequency Slope vs. Frequency RMSOUT vs. Pin with WCDMA 4 Carrier @ +25 °C RMSOUT Error vs. Pin with WCDMA 4 Carrier @ +25 °C RMSOUT Error vs. Pin with WCDMA 4 Carrier @ +85 °C wrt +25 °C Response RMSOUT Error vs. Pin with WCDMA 4 Carrier @ -40 °C wrt +25 °C Response RMSOUT vs. Pin with CW @ +25 °C RMSOUT Error vs. Pin with CW @ +25 °C RMSOUT vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & +25 °C Reading Error for WCDMA 4 Carrier wrt CW Response @ +25 °C RMSOUT vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & +85 °C Reading Error for WCDMA 4 Carrier wrt CW Response @ +85 °C RMSOUT vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & -40 °C Reading Error for WCDMA 4 Carrier wrt CW Response @ -40 °C Output Response with SCI = 0000 @ 1900 MHz Output Response with SCI = 1100 @ 1900 MHz Typical Supply Current vs. Pin, Vcc = 5V Input Return Loss vs. Frequency Output Ripple & Rise/Fall Time vs. Integration Setting [Sci4,Sci3,Sci2,Sci1] in Decimal Absolute Maximum Ratings Outline Drawing Package Information Pin Descriptions Evaluation PCB List of Materials Evaluation Order Information Application Circuit Application Information Principle of Operation Configuration For The Typical Application Broadband Single-Ended Input Interface RMSOUT & Error vs. Pin RMS Output Interface and Transient Response Table 1: Transient Response vs. SCI Setting Rise Time vs. SCI Setting over Input Power Rise Settling Time vs. SCI Setting over Input Power Fall Time vs. SCI Setting over Input Power Residual Ripple for 900 Mhz WiMAX @ SCI=0100 Residual Ripple for 900 Mhz WiMAX @ SCI=0110 Residual Ripple for 900 Mhz WiBRO @ SCI=0100 Residual Ripple for 900 Mhz WiBRO @ SCI=0110 Residual Ripple for 900 Mhz LTE Downlink @ SCI=0100 Residual Ripple for 900 Mhz LTE Downlink @ SCI=0110 Residual Ripple for 900 Mhz WCDMA4 @ SCI=0011 Residual Ripple for 900 Mhz WCDMA4 @ SCI=0100 LOG-Slope and Intercept Slope Adjustment Intercept Adjustment DC Offset Compensation Loop Standby Mode Modulation Performance - Crest factor performance Reading Error for WCDMA 4 Carrier wrt CW Response @ +25 °C Reading Error for WCDMA 4 Carrier wrt CW Response @ 2200MHz RMSOUT Error vs. Crest Factor over Frequency System Calibration Layout Considerations Definitions