Datasheet AMP01 (Analog Devices) - 10

Data Sheet AMP01 WAFER TEST LIMITS (AMP01NBC)
VS = ±15 V, RS = 10 kΩ, RL = 2 kΩ, TA = 25°C, unless otherwise noted. Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult the factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
Table 5. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
OFFSET VOLTAGE Input Offset Voltage VIOS 60 μV Input Offset Voltage Drift TCVIOS 0.15 μV/°C Output Offset Voltage VOOS 4 mV Output Offset Voltage Drift TCVOOS RG = ∞ 20 μV/°C Offset Referred to Input vs. Positive Supply PSR V+ = 5 V to 15 V G = 1000 120 dB G = 100 110 dB G = 10 95 dB G = 1 75 dB Offset Referred to Input vs. Negative Supply PSR V– = –5 V to –15 V G = 1000 105 dB G = 100 90 dB G = 10 70 dB G = 1 50 dB INPUT CURRENT Input Bias Current IB 4 nA Input Bias Current Drift TCIB 40 pA/°C Input Offset Current IOS 1 nA Input Offset Current Drift TCIOS 3 pA/°C INPUT Input Voltage Range IVR Guaranteed by CMR tests ±10 V min Common-Mode Rejection CMR VCM = ±10 V G = 1000 125 dB G = 100 120 dB G = 10 100 dB G = 1 85 dB GAIN Gain Equation Accuracy G = (20 × RS)/RG 0.6 % OUTPUT RATING Output Voltage Swing VOUT RL = 2 kΩ −13 +13 V RL = 500 kΩ −13 +13 V RL = 50 kΩ −2.5 +2.5 V Output Current Limit Output to ground short −60 +60 mA Output to ground short −120 +120 mA Quiescent Current IQ +V linked to +VOP 4.8 mA −V linked to −VOP 4.8 mA NOISE Nonlinearity en G = 1000 0.0007 % Voltage Noise Density in G = 1000, fO = 1 kHz 5 nV/√Hz Current Noise Density en p-p G = 1000, fO = 1 kHz 0.15 pA/√Hz Voltage Noise in p-p G = 1000, 0.1 Hz to 10 Hz 0.12 μV p-p Current Noise BW G = 1000, 0.1 Hz to 10 Hz 2 pA p-p DYNAMIC RESPONSE Small-Signal Bandwidth (−3 dB) SR G = 1000 26 kHz Slew Rate tS G = 10 4.5 V/μs Settling Time To 0.01%, 20 V step, G = 1000 50 μs Rev. E | Page 9 of 29 Document Outline FEATURES GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS DICE CHARACTERISTICS WAFER TEST LIMITS (AMP01NBC) ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION INPUT AND OUTPUT OFFSET VOLTAGES INPUT BIAS AND OFFSET CURRENTS GAIN COMMON-MODE REJECTION ACTIVE GUARD DRIVE GROUNDING SENSE AND REFERENCE TERMINALS DRIVING 50 Ω LOADS HEATSINKING OVERVOLTAGE PROTECTION POWER SUPPLY CONSIDERATIONS APPLICATIONS CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE