Datasheet AD8138-EP (Analog Devices) - 7

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AD8138-EP ABSOLUTE MAXIMUM RATINGS Table 5.
The power dissipated in the package (PD) is the sum of the
Parameter Rating
quiescent power dissipation and the power dissipated in the Supply Voltage ±5.5 V package due to the load drive for all outputs. The quiescent VOCM ±VS power is the voltage between the supply pins (VS) times the Output Voltage Swing See Figure 4 and Figure 5 quiescent current (IS). The load current consists of the differential Internal Power Dissipation 550 mW and common-mode currents flowing to the load, as well as Operating Temperature Range −55°C to +105°C currents flowing through the external feedback networks and Storage Temperature Range −65°C to +150°C internal common-mode feedback loop. The internal resistor tap Lead Temperature (Soldering, 10 sec) 300°C used in the common-mode feedback loop places a negligible Junction Temperature 150°C differential load on the output. RMS voltages and currents should Stresses above those listed under Absolute Maximum Ratings be considered when dealing with ac signals. may cause permanent damage to the device. This is a stress Airflow reduces θJA. In addition, more metal directly in contact rating only; functional operation of the device at these or any with the package leads from metal traces, through holes, ground, other conditions above those indicated in the operational and power planes reduces the θJA. section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect Figure 3 shows the maximum safe power dissipation vs. the device reliability. ambient temperature for the 8-lead MSOP (θJA = 145°C/W) package on a JEDEC standard 4-layer board. θ
THERMAL RESISTANCE
JA values are approximations. θJA is specified for the worst-case conditions, that is, θJA is
1.75
specified for the device soldered in a circuit board in still air.
Table 6. ) 1.50 W ( Package Type θ N JA Unit IO 1.25 T
8-Lead MSOP/4-Layer 145 °C/W
PA 1.00 ISSI D MAXIMUM POWER DISSIPATION ER W 0.75
The maximum safe power dissipation in the AD8138-EP package
PO M
is limited by the associated rise in junction temperature (T
U
J) on
0.50 M
the die. At approximately 150°C, which is the glass transition
XI A M 0.25
temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the
0
package exerts on the die, permanently shifting the parametric
5
03
–5 15 25 35 45 55 65 75 85 95
0
–55 –45 –35 –25 –15 105
7- 99 performance of the AD8138-EP. Exceeding a junction temperature
AMBIENT TEMPERATURE (°C)
08 of 150°C for an extended period can result in changes in the Figure 3. Maximum Power Dissipation vs. Ambient Temperature silicon devices, potentially causing failure.
ESD CAUTION
Rev. 0 | Page 7 of 12 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATION TYPICAL APPLICATION CIRCUIT TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ±DIN TO ±OUT SPECIFICATIONS VOCM TO ±OUT SPECIFICATIONS ±DIN TO ±OUT SPECIFICATIONS VOCM TO ±OUT SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE MAXIMUM POWER DISSIPATION ESD CAUTION MAXIMUM OUTPUT VOLTAGE SWING PIN CONFIGURATION AND FUNCTION DESCRIPTIONS OUTLINE DIMENSIONS ORDERING GUIDE