Datasheet AD7893 (Analog Devices) - 4

AD7893 TIMING CHARACTERISTICS1, 2 (VDD = +5 V, AGND = DGND = 0 V, REF IN = +2.5 V) A, B S Parameter Versions Version Units Test Conditions/Comments
t1 50 50 ns min CONVST Pulse Width t2 60 70 ns min SCLK High Pulse Width t3 30 40 ns min SCLK Low Pulse Width t 3 4 50 60 ns max SCLK Rising Edge to Data Valid Delay t 4 5 10 10 ns min Bus Relinquish Time after Falling Edge of SCLK 100 100 ns max NOTES 1 Sample tested at +25°C to ensure compliance. All input signals are measured with tr = tf = 1 ns (10% to 90% of +5 V) and timed from a voltage level of +1.6 V. 2 See Figure 5. 3 Measured with the load circuit of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.4 V. 4 Derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated back to remove the effects of charging or discharging the 50 pF capacitor. This means that the time, t 5, quoted in the timing characteristics is the true bus relinquish time of the part and, as such, is independent of external bus loading capacitances.
ABSOLUTE MAXIMUM RATINGS*
(TA = +25°C unless otherwise noted) VDD to AGND . –0.3 V to +7 V
1.6mA
VDD to DGND . –0.3 V to +7 V Analog Input Voltage to AGND AD7893-10, AD7893-5 . ± 17 V
TO
AD7893-2, AD7893-3 . –5 V, +10 V
OUTPUT +2.1V PIN
Reference Input Voltage to AGND . –0.3 V to VDD + 0.3 V
50pF
Digital Input Voltage to DGND . –0.3 V to VDD + 0.3 V Digital Output Voltage to DGND . –0.3 V to VDD + 0.3 V Operating Temperature Range
200µA
Commercial (A, B Versions) . –40°C to +85°C Extended (S Version) . –55°C to +125°C Storage Temperature Range . –65°C to +150°C Figure 1. Load Circuit for Access Time and Bus Junction Temperature . +150°C Relinquish Time Plastic DIP Package, Power Dissipation . 450 mW θJA Thermal Impedance . 130°C/W Lead Temperature (Soldering, 10 sec) . +260°C Cerdip Package, Power Dissipation . 450 mW θJA Thermal Impedance . 125°C/W Lead Temperature (Soldering, 10 sec) . +300°C SOIC Package, Power Dissipation . 450 mW θJA Thermal Impedance . 170°C/W Lead Temperature, Soldering Vapor Phase (60 sec) . +215°C Infrared (15 sec) . +220°C *Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although
WARNING!
the AD7893 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
ESD SENSITIVE DEVICE
recommended to avoid performance degradation or loss of functionality. REV. E –3–