Datasheet 2N4401 (ON Semiconductor) - 6

HerstellerON Semiconductor
BeschreibungGeneral Purpose Transistors NPN Silicon
Seiten / Seite7 / 6 — 2N4401. STATIC CHARACTERISTICS. Figure 15. DC Current Gain. Figure 16. …
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DokumentenspracheEnglisch

2N4401. STATIC CHARACTERISTICS. Figure 15. DC Current Gain. Figure 16. Collector Saturation Region. Figure 17. “On” Voltages

2N4401 STATIC CHARACTERISTICS Figure 15 DC Current Gain Figure 16 Collector Saturation Region Figure 17 “On” Voltages

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2N4401 STATIC CHARACTERISTICS
3.0 VCE = 1.0 V 2.0 VCE = 10 V TJ = 125°C 1.0 25°C 0.7 0.5 -55°C 0.3 FEh , NORMALIZED CURRENT GAIN 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
TS) 1.0 (VOL TJ = 25°C 0.8 TAGE 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 CEV , COLLECTOR-EMITTER VOL 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0 +0.5 TJ = 25°C V 0.8 BE(sat) @ IC/IB = 10 0 qVC for VCE(sat) C) ° TS) -0.5 0.6 VBE @ VCE = 10 V -1.0 TAGE (VOL 0.4 VOL -1.5 COEFFICIENT (mV/ 0.2 VCE(sat) @ IC/IB = 10 -2.0 qVB for VBE 0 -2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages Figure 18. Temperature Coefficients http://onsemi.com 6