Datasheet AD848, AD849 (Analog Devices) - 5

AD848/AD849 ABSOLUTE MAXIMUM RATINGS1 METALIZATION PHOTOGRAPH
Supply Voltage . ± 18 V Contact factory for latest dimensions. (AD848 and AD849 are identical Internal Power Dissipation2 except for the part number in the upper right.) Plastic (N) . 1.1 Watts Dimensions shown in inches and (mm). Small Outline (R) . 0.9 Watts Cerdip (Q) . 1.1 Watts LCC (E) . 0.8 Watts Input Voltage . ± VS Differential Input Voltage . ± 6 V Storage Temperature Range (Q) . –65°C to +150°C (N, R) . –65°C to +125°C Junction Temperature . +175°C Lead Temperature Range (Soldering 60 sec) . +300°C NOTES 1Stresses above those listed under “Absolute Maximum Ratings” may cause per- manent damage to the device. This is a stress rating only, and functional opera- tion of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2LCC: θJA = 150°C/Watt Mini-DIP Package: θJA = 110°C/Watt Cerdip Package: θJA = 110°C/Watt Small Outline Package: θJA = 155°C/Watt.
ORDERING GUIDE Gain Min Max Bandwidth Stable Offset Voltage Temperature Package Model MHz Gain mV Range –
8
C Option1
AD848JN 175 5 1 0 to +70 N-8 AD848JR2 175 5 1 0 to +70 R-8 AD848JCHIPS 175 5 1 0 to +70 Die Form AD848AQ 175 5 1 –40 to +85 Q-8 AD848SQ 175 5 1 –55 to +125 Q-8 AD848SQ/883B 175 5 1 –55 to +125 Q-8 AD848SE/883B 175 5 1 –55 to +125 E-20A AD849JN 725 25 1 0 to +70 N-8 AD849JR2 725 25 1 0 to +70 R-8 AD849AQ 725 25 0.75 –40 to +85 Q-8 AD849SQ 725 25 0.75 –55 to +125 Q-8 AD849SQ/883B 725 25 0.75 –55 to +125 Q-8 AD847J/A/S 50 1 1 See AD847 Data Sheet NOTES 1E = LCC; N = Plastic DIP; Q = Cerdip; R = Small Outline IC (SOIC). 2Plastic SOIC (R) available in tape and reel. AD848 available in S grade chips. AD849 available in J and S grade chips. –4– REV. B