Datasheet OP281, OP481 (Analog Devices) - 5

link to page 5
OP281/OP481
VS = ±5.0 V, TA = +25°C, unless otherwise noted.
Table 3. Parameter Symbol Condition Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage1 VOS 0.1 1.5 mV –40°C ≤ TA ≤ +85°C 2.5 mV Input Bias Current IB –40°C ≤ TA ≤ +85°C 3 10 nA Input Offset Current IOS –40°C ≤ TA ≤ +85°C 0.1 7 nA Input Voltage Range –5 +4 V Common-Mode Rejection CMRR VCM = –5.0 V to +4.0 V, –40°C ≤ TA ≤ +85°C 65 95 dB Large-Signal Voltage Gain AVO RL = 1 MΩ, VO = ±4.0 V, 5 13 V/mV –40°C ≤ TA ≤ +85°C 2 V/mV Offset Voltage Drift ΔVOS/ΔT –40°C to +85°C 10 μV/°C Bias Current Drift ΔIB/ΔT 20 pA/°C Offset Current Drift ΔIOS/ΔT 2 pA/°C OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 100 kΩ to GND, –40°C ≤ TA ≤ +85°C ±4.925 ±4.98 V Short-Circuit Limit ISC 12 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±1.35 V to ±6 V, –40°C ≤ TA ≤ +85°C 76 95 dB Supply Current/Amplifier ISY VO = 0 V 3.3 5 μA –40°C ≤ TA ≤ +85°C 6 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 50 pF 28 V/ms Gain Bandwidth Product GBP 105 kHz Phase Margin φM 75 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 10 μV p-p Voltage Noise Density en f = 1 kHz 85 nV/√Hz f = 10 kHz 75 nV/√Hz Current Noise Density in <1 pA/√Hz 1 VOS is tested under a no load condition. Rev. D | Page 5 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS THEORY OF OPERATION INPUT OVERVOLTAGE PROTECTION INPUT OFFSET VOLTAGE INPUT COMMON-MODE VOLTAGE RANGE CAPACITIVE LOADING MICROPOWER REFERENCE VOLTAGE GENERATOR WINDOW COMPARATOR LOW-SIDE CURRENT MONITOR LOW VOLTAGE HALF-WAVE AND FULL-WAVE RECTIFIERS BATTERY-POWERED TELEPHONE HEADSET AMPLIFIER OUTLINE DIMENSIONS ORDERING GUIDE