Datasheet AD8519, AD8529 (Analog Devices) - 6

AD8519/AD8529
VS = 5.0 V, V− = −5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 4. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS AD8519AKS, AD8519ART 600 1100 μV −40°C ≤ TA ≤ +125°C 800 1300 μV AD8519AR (R-8), AD8529 600 1000 μV −40°C ≤ TA ≤ +125°C 1100 μV Input Bias Current IB VCM = 0 V 300 nA VCM = 0 V, −40°C ≤ TA ≤ +125°C 400 nA Input Offset Current IOS VCM = 0 V ±50 nA VCM = 0 V, −40°C ≤ TA ≤ +125°C ±100 nA Input Voltage Range VCM −5 +4 V Common-Mode Rejection Ratio CMRR −4.9 V ≤ VCM ≤ +4.0 V, −40°C ≤ TA ≤ +125°C 70 100 dB Large Signal Voltage Gain AVO RL = 2 kΩ 30 V/mV RL = 10 kΩ 50 200 V/mV −40°C ≤ TA ≤ +125°C 25 V/mV Offset Voltage Drift ∆VOS/∆T 2 μV/°C Bias Current Drift ∆IB/∆T 500 pA/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 250 μA −40°C ≤ TA ≤ +125°C 4.90 V IL = 5 mA 4.80 V Output Voltage Swing Low VOL IL = 250 μA −40°C ≤ TA ≤ +125°C −4.90 V IL = 5 mA −4.80 V Short-Circuit Current ISC Short to ground, instantaneous ±70 mA Maximum Output Current IOUT ±25 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±1.5 V to ±6 V, −40°C ≤ TA ≤ +125°C 60 100 dB Supply Current/Amplifier ISY VOUT = 0 V 600 1200 μA −40°C ≤ TA ≤ +125°C 1400 μA DYNAMIC PERFORMANCE Slew Rate SR −4 V < VOUT < +4 V, RL = 10 kΩ 2.9 V/μs Settling Time tS To 0.01% 1000 ns Gain Bandwidth Product GBP 8 MHz Phase Margin Φm 60 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 10 nV/√Hz Current Noise Density in f = 1 kHz 0.4 pA/√Hz Rev. D | Page 6 of 16 Document Outline FEATURES APPLICATIONS PIN CONFIGURATIONS GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION MAXIMUM POWER DISSIPATION PRECISION FULL-WAVE RECTIFIER 10× MICROPHONE PREAMP MEETS PC99 SPECIFICATIONS TWO-ELEMENT VARYING BRIDGE AMPLIFIER OUTLINE DIMENSIONS ORDERING GUIDE