Datasheet AD8551, AD8552, AD8554 (Analog Devices) - 3

HerstellerAnalog Devices
BeschreibungSheet Zero-Drift, Single-Supply, Rail-to-Rail Input/Output Operational Amplifiers
Seiten / Seite24 / 3 — Data Sheet. AD8551/AD8552/AD8554. SPECIFICATIONS ELECTRICAL …
RevisionF
Dateiformat / GrößePDF / 512 Kb
DokumentenspracheEnglisch

Data Sheet. AD8551/AD8552/AD8554. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. Parameter. Symbol. Conditions. Min. Typ. Max. Unit

Data Sheet AD8551/AD8552/AD8554 SPECIFICATIONS ELECTRICAL CHARACTERISTICS Table 1 Parameter Symbol Conditions Min Typ Max Unit

Modelllinie für dieses Datenblatt

Textversion des Dokuments

Data Sheet AD8551/AD8552/AD8554 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
VS = 5 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 1 5 μV −40°C ≤ TA ≤ +125°C 10 μV Input Bias Current IB 10 50 pA AD8551/AD8554 −40°C ≤ TA ≤ +125°C 1.0 1.5 nA AD8552 −40°C ≤ TA ≤ +85°C 160 300 pA AD8552 −40°C ≤ TA ≤ +125°C 2.5 4 nA Input Offset Current IOS 20 70 pA AD8551/AD8554 −40°C ≤ TA ≤ +125°C 150 200 pA AD8552 −40°C ≤ TA ≤ +85°C 30 150 pA AD8552 −40°C ≤ TA ≤ +125°C 150 400 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to +5 V 120 140 dB −40°C ≤ TA ≤ +125°C 115 130 dB Large Signal Voltage Gain1 AVO RL = 10 kΩ, VO = 0.3 V to 4.7 V 125 145 dB −40°C ≤ TA ≤ +125°C 120 135 dB Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 0.005 0.04 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 4.99 4.998 V RL = 100 kΩ to GND @ −40°C to +125°C 4.99 4.997 V RL = 10 kΩ to GND 4.95 4.98 V RL = 10 kΩ to GND @ −40°C to +125°C 4.95 4.975 V Output Voltage Low VOL RL = 100 kΩ to V+ 1 10 mV RL = 100 kΩ to V+ @ −40°C to +125°C 2 10 mV RL = 10 kΩ to V+ 10 30 mV RL = 10 kΩ to V+ @ −40°C to +125°C 15 30 mV Output Short-Circuit Limit Current ISC ±25 ±50 mA −40°C to +125°C ±40 mA Output Current IO ±30 mA −40°C to +125°C ±15 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 120 130 dB −40°C ≤ TA ≤ +125°C 115 130 dB Supply Current/Amplifier ISY VO = 0 V 850 975 μA −40°C ≤ TA ≤ +125°C 1000 1075 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.4 V/μs Overload Recovery Time 0.05 0.3 ms Gain Bandwidth Product GBP 1.5 MHz NOISE PERFORMANCE Voltage Noise en p-p 0 Hz to 10 Hz 1.0 μV p-p en p-p 0 Hz to 1 Hz 0.32 μV p-p Voltage Noise Density en f = 1 kHz 42 nV/√Hz Current Noise Density in f = 10 Hz 2 fA/√Hz 1 Gain testing is dependent upon test bandwidth. Rev. F | Page 3 of 24 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL CHARACTERISTICS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS FUNCTIONAL DESCRIPTION AMPLIFIER ARCHITECTURE BASIC AUTO-ZERO AMPLIFIER THEORY Auto-Zero Phase Amplification Phase HIGH GAIN, CMRR, PSRR MAXIMIZING PERFORMANCE THROUGHPROPER LAYOUT 1/f NOISE CHARACTERISTICS INTERMODULATION DISTORTION BROADBAND AND EXTERNAL RESISTOR NOISE CONSIDERATIONS OUTPUT OVERDRIVE RECOVERY INPUT OVERVOLTAGE PROTECTION OUTPUT PHASE REVERSAL CAPACITIVE LOAD DRIVE POWER-UP BEHAVIOR APPLICATIONS INFORMATION A 5 V PRECISION STRAIN GAGE CIRCUIT 3 V INSTRUMENTATION AMPLIFIER A HIGH ACCURACY THERMOCOUPLE AMPLIFIER PRECISION CURRENT METER PRECISION VOLTAGE COMPARATOR OUTLINE DIMENSIONS ORDERING GUIDE