Datasheet AD8510, AD8512, AD8513 (Analog Devices) - 4
| Hersteller | Analog Devices |
| Beschreibung | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Quad Operational Amplifier |
| Seiten / Seite | 20 / 4 — AD8510/AD8512/AD8513. Date Sheet. ELECTRICAL CHARACTERISTICS. Table 2. … |
| Revision | K |
| Dateiformat / Größe | PDF / 396 Kb |
| Dokumentensprache | Englisch |
AD8510/AD8512/AD8513. Date Sheet. ELECTRICAL CHARACTERISTICS. Table 2. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
Modelllinie für dieses Datenblatt
AD8510
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AD8510/AD8512/AD8513 Date Sheet ELECTRICAL CHARACTERISTICS
@ VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage (B Grade)1 VOS 0.08 0.4 mV −40°C < TA < +125°C 0.8 mV Offset Voltage (A Grade) VOS 0.1 1.0 mV −40°C < TA < +125°C 1.8 mV Input Bias Current IB 25 80 pA −40°C < TA < +85°C 0.7 nA −40°C < TA < +125°C 10 nA Input Offset Current IOS 6 75 pA −40°C < TA < +85°C 0.3 nA −40°C < TA < +125°C 0.5 nA Input Capacitance Differential 12.5 pF Common Mode 11.5 pF Input Voltage Range −13.5 +13.0 V Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 86 108 dB Large-Signal Voltage Gain AVO RL = 2 kΩ, VCM = 0 V, 115 196 V/mV VO = −13.5 V to +13.5 V Offset Voltage Drift (B Grade)1 ΔVOS/ΔT 1.0 5 µV/°C Offset Voltage Drift (A Grade) ΔVOS/ΔT 1.7 12 µV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ +14.0 +14.2 V Output Voltage Low VOL RL = 10 kΩ, −40°C < TA < +125°C −14.9 −14.6 V Output Voltage High VOH RL = 2 kΩ +13.8 +14.1 V Output Voltage Low VOL RL = 2 kΩ, −40°C < TA < +125°C –14.8 −14.5 V Output Voltage High VOH RL = 600 Ω +13.5 +13.9 V RL = 600 Ω, −40°C < TA < +125°C +11.4 V Output Voltage Low VOL RL = 600 Ω −14.3 −13.8 V RL = 600 Ω, −40°C < TA < +125°C −12.1 V Output Current IOUT ±70 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 dB Supply Current/Amplifier ISY AD8510/AD8512/AD8513 VO = 0 V 2.2 2.5 mA AD8510/AD8512 −40°C < TA < +125°C 2.6 mA AD8513 −40°C < TA < +125°C 3.0 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 20 V/µs Gain Bandwidth Product GBP 8 MHz Settling Time tS To 0.1%, 0 V to 10 V step, G = +1 0.5 µs To 0.01%, 0 V to 10 V step, G = +1 0.9 µs Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 % Phase Margin φM 52 Degrees Rev. J | Page 4 of 20 Document Outline Features Applications Pin Configurations General Description Revision History Specifications Electrical Characteristics Absolute Maximum Ratings ESD Caution Typical Performance Characteristics General Application Information Input Overvoltage Protection Output Phase Reversal Total Harmonic Distortion (THD) + Noise Total Noise Including Source Resistors Settling Time Overload Recovery Time Capacitive Load Drive Open-Loop Gain and Phase Response Precision Rectifiers I-V Conversion Applications Photodiode Circuits Signal Transmission Applications Crosstalk Outline Dimensions Ordering Guide
AD8510/AD8512/AD8513 Date Sheet ELECTRICAL CHARACTERISTICS
@ VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage (B Grade)1 VOS 0.08 0.4 mV −40°C < TA < +125°C 0.8 mV Offset Voltage (A Grade) VOS 0.1 1.0 mV −40°C < TA < +125°C 1.8 mV Input Bias Current IB 25 80 pA −40°C < TA < +85°C 0.7 nA −40°C < TA < +125°C 10 nA Input Offset Current IOS 6 75 pA −40°C < TA < +85°C 0.3 nA −40°C < TA < +125°C 0.5 nA Input Capacitance Differential 12.5 pF Common Mode 11.5 pF Input Voltage Range −13.5 +13.0 V Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 86 108 dB Large-Signal Voltage Gain AVO RL = 2 kΩ, VCM = 0 V, 115 196 V/mV VO = −13.5 V to +13.5 V Offset Voltage Drift (B Grade)1 ΔVOS/ΔT 1.0 5 µV/°C Offset Voltage Drift (A Grade) ΔVOS/ΔT 1.7 12 µV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ +14.0 +14.2 V Output Voltage Low VOL RL = 10 kΩ, −40°C < TA < +125°C −14.9 −14.6 V Output Voltage High VOH RL = 2 kΩ +13.8 +14.1 V Output Voltage Low VOL RL = 2 kΩ, −40°C < TA < +125°C –14.8 −14.5 V Output Voltage High VOH RL = 600 Ω +13.5 +13.9 V RL = 600 Ω, −40°C < TA < +125°C +11.4 V Output Voltage Low VOL RL = 600 Ω −14.3 −13.8 V RL = 600 Ω, −40°C < TA < +125°C −12.1 V Output Current IOUT ±70 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 dB Supply Current/Amplifier ISY AD8510/AD8512/AD8513 VO = 0 V 2.2 2.5 mA AD8510/AD8512 −40°C < TA < +125°C 2.6 mA AD8513 −40°C < TA < +125°C 3.0 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 20 V/µs Gain Bandwidth Product GBP 8 MHz Settling Time tS To 0.1%, 0 V to 10 V step, G = +1 0.5 µs To 0.01%, 0 V to 10 V step, G = +1 0.9 µs Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 % Phase Margin φM 52 Degrees Rev. J | Page 4 of 20 Document Outline Features Applications Pin Configurations General Description Revision History Specifications Electrical Characteristics Absolute Maximum Ratings ESD Caution Typical Performance Characteristics General Application Information Input Overvoltage Protection Output Phase Reversal Total Harmonic Distortion (THD) + Noise Total Noise Including Source Resistors Settling Time Overload Recovery Time Capacitive Load Drive Open-Loop Gain and Phase Response Precision Rectifiers I-V Conversion Applications Photodiode Circuits Signal Transmission Applications Crosstalk Outline Dimensions Ordering Guide