Datasheet AD8597, AD8599 (Analog Devices) - 4
| Hersteller | Analog Devices |
| Beschreibung | Ultralow Distortion, Ultralow Noise Op Amp (single) |
| Seiten / Seite | 20 / 4 — AD8597/AD8599. Data Sheet. Table 3. Parameter. Symbol. Conditions. Min. … |
| Revision | F |
| Dateiformat / Größe | PDF / 721 Kb |
| Dokumentensprache | Englisch |
AD8597/AD8599. Data Sheet. Table 3. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
Textversion des Dokuments
AD8597/AD8599 Data Sheet
VS = ±15 V, VCM = 0 V, VO = 0 V, TA = +25°C, unless otherwise specified.
Table 3. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 10 120 μV −40°C ≤ TA ≤ +125°C 180 μV Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 0.8 2.2 μV/°C Input Bias Current IB 25 200 nA −40°C ≤ TA ≤ +125°C 300 nA Input Offset Current IOS 50 200 nA −40°C ≤ TA ≤ +125°C 300 nA Input Voltage Range IVR −12.5 +12.5 V Common-Mode Rejection Ratio CMRR −12.5 V ≤ VCM ≤ +12.5 V 120 135 dB −40°C ≤ TA ≤ +125°C 115 dB Large Signal Voltage Gain AVO RL ≥ 600 Ω, VO = −11 V to +11 V 110 116 dB −40°C ≤ TA ≤ +125°C 106 dB Input Capacitance Differential Capacitance CDIFF 12.1 pF Common-Mode Capacitance CCM 5.1 pF OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 600 Ω 13.1 13.4 V −40°C ≤ TA ≤ +125°C 12.8 V RL = 2 kΩ 13.5 13.7 V −40°C ≤ TA ≤ +125°C 13.2 V Output Voltage Low VOL RL = 600 Ω −13.2 −12.9 V −40°C ≤ TA ≤ +125°C −12.8 V RL = 2 kΩ −13.5 −13.4 V −40°C ≤ TA ≤ +125°C −13.3 V Output Short-Circuit Current ISC ±52 mA Closed-Loop Output Impedance ZOUT At 1 MHz, AV = 1 5 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = ±18 V to ±4.5 V 120 140 dB −40°C ≤ TA ≤ +125°C 118 dB Supply Current per Amplifier ISY 5.0 5.7 mA −40°C ≤ TA ≤ +125°C 6.75 mA DYNAMIC PERFORMANCE Slew Rate SR AV = −1, RL = 2 kΩ 16 V/μs AV = 1, RL = 2 kΩ 15 V/μs Settling Time ts To 0.01%, step = 10 V 2 μs Gain Bandwidth Product GBP 10 MHz Phase Margin ΦM 65 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 76 nV p-p Voltage Noise Density en f = 1 kHz 1.07 1.15 nV/√Hz f = 10 Hz 1.5 nV/√Hz Correlated Current Noise f = 1 kHz 1.9 pA/√Hz f = 10 Hz 4.3 pA/√Hz Uncorrelated Current Noise f = 1 kHz 2.3 pA/√Hz f = 10 Hz 5.3 pA/√Hz Total Harmonic Distortion + Noise THD + N G = 1, RL ≥ 1 kΩ, f = 1 kHz, VRMS = 3 V −120 dB Channel Separation CS f = 10 kHz −120 dB Rev. E | Page 4 of 20 Document Outline Features Applications Pin Configurations General Description Table of Contents Revision History Specifications Absolute Maximum Ratings Thermal Resistance Power Sequencing ESD Caution Typical Performance Characteristics Functional Operation Input Voltage Range Output Phase Reversal Noise and Source Impedance Considerations Outline Dimensions Ordering Guide
VS = ±15 V, VCM = 0 V, VO = 0 V, TA = +25°C, unless otherwise specified.
Table 3. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 10 120 μV −40°C ≤ TA ≤ +125°C 180 μV Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 0.8 2.2 μV/°C Input Bias Current IB 25 200 nA −40°C ≤ TA ≤ +125°C 300 nA Input Offset Current IOS 50 200 nA −40°C ≤ TA ≤ +125°C 300 nA Input Voltage Range IVR −12.5 +12.5 V Common-Mode Rejection Ratio CMRR −12.5 V ≤ VCM ≤ +12.5 V 120 135 dB −40°C ≤ TA ≤ +125°C 115 dB Large Signal Voltage Gain AVO RL ≥ 600 Ω, VO = −11 V to +11 V 110 116 dB −40°C ≤ TA ≤ +125°C 106 dB Input Capacitance Differential Capacitance CDIFF 12.1 pF Common-Mode Capacitance CCM 5.1 pF OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 600 Ω 13.1 13.4 V −40°C ≤ TA ≤ +125°C 12.8 V RL = 2 kΩ 13.5 13.7 V −40°C ≤ TA ≤ +125°C 13.2 V Output Voltage Low VOL RL = 600 Ω −13.2 −12.9 V −40°C ≤ TA ≤ +125°C −12.8 V RL = 2 kΩ −13.5 −13.4 V −40°C ≤ TA ≤ +125°C −13.3 V Output Short-Circuit Current ISC ±52 mA Closed-Loop Output Impedance ZOUT At 1 MHz, AV = 1 5 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = ±18 V to ±4.5 V 120 140 dB −40°C ≤ TA ≤ +125°C 118 dB Supply Current per Amplifier ISY 5.0 5.7 mA −40°C ≤ TA ≤ +125°C 6.75 mA DYNAMIC PERFORMANCE Slew Rate SR AV = −1, RL = 2 kΩ 16 V/μs AV = 1, RL = 2 kΩ 15 V/μs Settling Time ts To 0.01%, step = 10 V 2 μs Gain Bandwidth Product GBP 10 MHz Phase Margin ΦM 65 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 76 nV p-p Voltage Noise Density en f = 1 kHz 1.07 1.15 nV/√Hz f = 10 Hz 1.5 nV/√Hz Correlated Current Noise f = 1 kHz 1.9 pA/√Hz f = 10 Hz 4.3 pA/√Hz Uncorrelated Current Noise f = 1 kHz 2.3 pA/√Hz f = 10 Hz 5.3 pA/√Hz Total Harmonic Distortion + Noise THD + N G = 1, RL ≥ 1 kΩ, f = 1 kHz, VRMS = 3 V −120 dB Channel Separation CS f = 10 kHz −120 dB Rev. E | Page 4 of 20 Document Outline Features Applications Pin Configurations General Description Table of Contents Revision History Specifications Absolute Maximum Ratings Thermal Resistance Power Sequencing ESD Caution Typical Performance Characteristics Functional Operation Input Voltage Range Output Phase Reversal Noise and Source Impedance Considerations Outline Dimensions Ordering Guide