Datasheet IRF9530NPbF (Infineon) - 3

HerstellerInfineon
BeschreibungHEXFET Power MOSFET
Seiten / Seite9 / 3 — VGS. TOP - 15V. - 10V. - 8.0V. - 7.0V. - 6.0V. - 5.5V. - 5.0V. BOTTOM - …
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DokumentenspracheEnglisch

VGS. TOP - 15V. - 10V. - 8.0V. - 7.0V. - 6.0V. - 5.5V. - 5.0V. BOTTOM - 4.5V. Fig 1. Fig 2. Fig 3. Fig 4

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V Fig 1 Fig 2 Fig 3 Fig 4

Modelllinie für dieses Datenblatt

Textversion des Dokuments

IRF9530NPbF 100
VGS
100
VGS TOP - 15V TOP - 15V - 10V - 10V
)
- 8.0V - 8.0V - 7.0V
)
- 7.0V - 6.0V - 6.0V
t (A
- 5.5V
t (A
- 5.5V - 5.0V - 5.0V BOTTOM - 4.5V BOTTOM - 4.5V
urren 10 urren 10 C C ource ource -S -S -4.5V 1 -4.5V rain-to 1 rain-to D-I , D D-I , D 20µs PULSE WIDTH 20µs PULSE WIDTH T c = 25°C T = C 175°C 0.1 A 0.1 A 0.1 1 10 100 0.1 1 10 100 DS -V , Drain-to-Source Voltage (V) DS -V , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 2.5 100 ID = -14A ) A ( 2.0 esistance T = 25°C J urrent n R 10 T J = 175°C 1.5 ce C alized) our ource O m -S or 1.0 to-S (N n- 1 rain-to rai D 0.5 D-I , (on) V = - S DS 50V , D D 20µs PULSE WIDTH R V = GS -10V 0.1 0.0 A 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 ° - T , Junction Temperature ( C) GS V , Gate-to-Source Voltage (V) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature