Data SheetADA4522-1/ADA4522-2/ADA4522-4ParameterSymbol Test Conditions/CommentsMinTypMax Unit Short-Circuit Current Source ISC+ 21 mA TA = 125°C 15 mA Short-Circuit Current Sink ISC− 33 mA TA = 125°C 22 mA Closed-Loop Output Impedance ZOUT f = 1 MHz, AV = 1 4 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = 4.5 V to 55 V 150 160 dB −40°C ≤ TA ≤ +125°C 145 dB Supply Current per Amplifier ISY ADA4522-2, ADA4522-4, IOUT = 0 mA 830 900 µA ADA4522-2, ADA4522-4, −40°C ≤ TA ≤ +125°C 950 µA ADA4522-1, IOUT = 0 mA 840 910 µA ADA4522-1, −40°C ≤ TA ≤ +125°C 970 µA DYNAMIC PERFORMANCE Slew Rate SR+ RL = 10 kΩ, CL = 50 pF, AV = 1 1.8 V/µs SR− RL = 10 kΩ, CL = 50 pF, AV = 1 0.9 V/µs Gain Bandwidth Product GBP VIN = 10 mV p-p, RL = 10 kΩ, CL = 50 pF, AV = 100 2.7 MHz Unity-Gain Crossover UGC VIN = 10 mV p-p, RL = 10 kΩ, CL = 50 pF, AV = 1 3 MHz −3 dB Closed-Loop Bandwidth f−3 dB VIN = 10 mV p-p, RL = 10 kΩ, CL = 50 pF, AV = 1 6.5 MHz Phase Margin ΦM VIN = 10 mV p-p, RL = 10 kΩ, CL = 50 pF, AV = 1 64 Degrees Settling Time to 0.1% tS VIN = 10 V step, RL = 10 kΩ, CL = 50 pF, AV = 1 12 µs Settling Time to 0.01% tS VIN = 10 V step, RL = 10 kΩ, CL = 50 pF, AV = 1 14 µs Channel Separation CS VIN = 10 V p-p, f = 10 kHz, RL = 10 kΩ, CL = 50 pF 98 dB EMI Rejection Ratio of +IN/+IN x EMIRR VIN = 100 mV peak, f = 400 MHz 72 dB VIN = 100 mV peak, f = 900 MHz 80 dB VIN = 100 mV peak, f = 1800 MHz 83 dB VIN = 100 mV peak, f = 2400 MHz 85 dB NOISE PERFORMANCE Total Harmonic Distortion Plus Noise THD + N AV = 1, f = 1 kHz, VIN = 6 V rms BW = 80 kHz 0.0005 % BW = 500 kHz 0.004 % Peak-to-Peak Voltage Noise eN p-p AV = 100, f = 0.1 Hz to 10 Hz 117 nV p-p Voltage Noise Density eN AV = 100, f = 1 kHz 5.8 nV/√Hz Peak-to-Peak Current Noise iN p-p AV = 100, f = 0.1 Hz to 10 Hz 16 pA p-p Current Noise Density iN AV = 100, f = 1 kHz 0.8 pA/√Hz ELECTRICAL CHARACTERISTICS—55 V OPERATION VSY = 55 V, VCM = VSY/2 V, TA = 25°C, unless otherwise specified. Table 4. ParameterSymbolTest Conditions/CommentsMinTypMaxUnit INPUT CHARACTERISTICS Offset Voltage VOS VCM = VSY/2 1.5 7 µV −40°C ≤ TA ≤ +125°C 10 µV Offset Voltage Drift TCVOS ADA4522-1, ADA4522-2 6 30 nV/°C ADA4522-4 9 40 nV/°C Input Bias Current IB 50 150 pA −40°C ≤ TA ≤ +85°C 500 pA −40°C ≤ TA ≤ +125°C 4.5 nA Input Offset Current IOS 80 300 pA −40°C ≤ TA ≤ +85°C 400 pA ADA4522-1, ADA4522-2, −40°C ≤ TA ≤ +125°C 500 pA ADA4522-4, −40°C ≤ TA ≤ +125°C 550 pA Rev. E | Page 5 of 32 Document Outline Features Applications General Description Pin Connection Diagram Revision History Specifications Electrical Characteristics—5.0 V Operation Electrical Characteristics—30 V Operation Electrical Characteristics—55 V Operation Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Theory of Operation On-Chip Input EMI Filter and Clamp Circuit Thermal Shutdown Input Protection Single-Supply and Rail-to-Rail Output Large Signal Transient Response Case 1 Case 2 Noise Considerations 1/f Noise Source Resistance Residual Ripple Current Noise Density EMI Rejection Ratio Capacitive Load Stability Applications Information Single-Supply Instrumentation Amplifier Load Cell/Strain Gage Sensor Signal Conditioning Using the ADA4522-2 Precision Low-Side Current Shunt Sensor Printed Circuit Board Layout Comparator Operation Outline Dimensions Ordering Guide