Datasheet MUR10060CTR - Genesic Semiconductor DIODE, RECTIF, 600 V, 100 A, TWIN TOW — Datenblatt

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Manufacturer: Genesic Semiconductor

Description: DIODE, RECTIF, 600 V, 100 A, TWIN TOW

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Docket:
MUR10040CT thru MUR10060CTR
Silicon Super Fast Recovery Diode
Features
· High Surge Capability · Types up to 600 V VRRM Twin Tower Package
VRRM = 50 V - 600 V IF = 100 A

Specifications:

• Diode Type: Fast Recovery
• Forward Current If(AV): 50 A
• Forward Surge Current Ifsm Max: 400 A
• Forward Voltage VF Max: 1.7 V
• Number of Pins: 2
• Operating Temperature Range: -40°C to +175°C
• Package / Case: Twin Tower
• Repetitive Reverse Voltage Vrrm Max: 600 V
• Reverse Recovery Time trr Max: 110 ns

Accessories:

• Electrolube - HTS35SL
• H S MARSTON - 150CN-01250-A-200
• Multicomp - MK3311