Datasheet MBR12030CT - Genesic Semiconductor DIODE, RECTIF, 30 V, 120 A, TWIN TOWER — Datenblatt

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Manufacturer: Genesic Semiconductor

Description: DIODE, RECTIF, 30 V, 120 A, TWIN TOWER

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Docket:
MBR12020CT thru MBR12040CTR
Silicon Power Schottky Diode
Features
· High Surge Capability · Types up to 100 V VRRM Twin Tower Package
VRRM = 20 V - 100 V IF = 120 A

Specifications:

• Diode Type: Schottky
• Forward Current If(AV): 60 A
• Forward Surge Current Ifsm Max: 800 A
• Forward Voltage VF Max: 650 mV
• Number of Pins: 2
• Operating Temperature Range: -40°C to +175°C
• Package / Case: Twin Tower
• Repetitive Reverse Voltage Vrrm Max: 30 V

Accessories:

• Electrolube - HTS35SL
• H S MARSTON - 150CN-01250-A-200
• Multicomp - MK3311