Datasheet GA035XCP12-247 - Genesic Semiconductor IGBT SILICON CARBIDE (SiC) DIODE COPACK, 1200 V, 35 A, TO-247 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Genesic Semiconductor

Description: IGBT SILICON CARBIDE (SiC) DIODE COPACK, 1200 V, 35 A, TO-247

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Specifications:

• Collector Emitter Voltage Vces: 1200 V
• DC Collector Current: 35 A
• Number of Pins: 3
• Operating Temperature Range: -40°C to +150°C
• Package / Case: 3-TO-247
• Transistor Type: IGBT
• RoHS: Yes

Andere Namen:

GA035XCP12247, GA035XCP12 247