Datasheet DB103G - Taiwan Semiconductor BRIDGE RECTIFIER, 1 A, 200 V — Datenblatt

Taiwan Semiconductor DB103G

Part Number: DB103G

Detaillierte Beschreibung

Manufacturer: Taiwan Semiconductor

Description: BRIDGE RECTIFIER, 1 A, 200 V

Docket:
DB101G THRU DB107G
Single Phase 1.0 AMP.

Glass Passivated Bridge Rectifiers
Voltage Range 50 to 1000 Volts Current 1.0 Ampere
Features a a a a a a a UL Recognized File # E-96005 Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique High temperature soldering guaranteed: 250°C / 10 seconds / 0.375" ( 9.5mm ) lead length at 5 lbs., ( 2.3 kg ) tension Small size, simple installation Leads solderable per MIL-STD-202, Method 208 High surge current capability
DB

Specifications:

Body Height Max: 3.3 mm
Device Marking: DB103G
Diode Mounting Type: Through Hole
Diode Type: Bridge rectifier, single phase
External Depth: 6.5 mm
External Length / Height: 3.3 mm
External Width: 8.51 mm
Forward Current If(AV): 1 A
Forward Surge Current Ifsm Max: 30 A
Forward Voltage VF Max: 1.1 V
Mounting Type: Through Hole
Number of Phases: Single
Number of Pins: 4
Operating Temperature Range: -55°C to +150°C
Output Current Max: 1 A
Package / Case: DIL
RMS Input Voltage: 140 V
Repetitive Reverse Voltage Vrrm Max: 200 V
SVHC: No SVHC (15-Dec-2010)

RoHS: Yes