Datasheet PEMZ7 - NXP TRANSISTOR, NPN/PNP, SOT-666 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANSISTOR, NPN/PNP, SOT-666

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 12 V
• Continuous Collector Current Ic Max: 0.1 A
• Current Ic Continuous a Max: 0.5 A
• DC Current Gain Min: 200
• DC Current Gain: 10 mA
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 280 MHz
• Mounting Type: SMD
• Number of Pins: 6
• Package / Case: SOT-666
• Power Dissipation Ptot Max: 300 mW
• Power Dissipation per device Max: 200 mW
• SMD Marking: Z7
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-666
• Transistor Polarity: NPN / PNP
• Transistor Type: Small Signal General Purpose
• Voltage Vcbo: 15 V

RoHS: Yes