Datasheet NTE916 - NTE Electronics Transistor Array IC — Datenblatt
Part Number: NTE916
Detaillierte Beschreibung
Manufacturer: NTE Electronics
Description: Transistor Array IC
Docket:
NTE916 Integrated Circuit High Current, NPN Transistor Array, Common Emitter
Description: The NTE916 is a high current transistor array in a 16Lead DIP type package consisting of seven silicon NPN transistors on a common monolithic substrate connected in a commonemitter configuration designed for directly driving sevensegment displays and lightemitting diodes (LED) displays.
This device is also well suited for a variety of other drive applications including relay control and thyristor firing. Features: D Seven Transistors Permit a Wide Range of Applications D High Collector Current: IC = 100mA Max D Low CollectorEmitter Saturation Voltage: VCE(sat) = 400mV Typ @ 50mA Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation (Total Package), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Per Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Specifications:
- Collector Emitter Voltage V(br)ceo: 16 V
- Current Ic Continuous a Max: 100 mA
- DC Collector Current: 100 mA
- DC Current Gain: 40
- Module Configuration: Seven
- Mounting Type: Through Hole
- Number of Pins: 16
- Number of Transistors: 7
- Operating Temperature Range: -55°C to +125°C
- Package / Case: 16-DIP
- Power Dissipation Pd: 750 mW
- SVHC: No SVHC (15-Dec-2010)
- Transistor Case Style: DIP
- Transistor Polarity: NPN