Datasheet PUMD9 - NXP TRANSISTOR, DIGITAL, DUAL, SOT-363 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANSISTOR, DIGITAL, DUAL, SOT-363

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Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 50 V
• Collector Emitter Voltage Vces: 100 mV
• Continuous Collector Current Ic Max: 100 A
• Current Ic Continuous a Max: 100 A
• DC Collector Current: 100 mA
• DC Current Gain Min: 100
• DC Current Gain: 100
• Full Power Rating Temperature: 25°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• Number of Transistors: 2
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-363
• Power Dissipation Pd: 300 mW
• Power Dissipation Ptot Max: 300 mW
• Resistance R1 PNP: 10 kOhm
• Resistance R1: 10 kOhm
• Resistance R2: 47 kOhm
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-363
• Transistor Polarity: NPN / PNP
• Transistor Type: Bias Resistor (BRT)
• Voltage Vcbo: 50 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7-6-10
• LICEFA - V11-7