Datasheet PEMT1 - NXP TRANSISTOR, PNP, SOT-666 — Datenblatt

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Manufacturer: NXP

Description: TRANSISTOR, PNP, SOT-666

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Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• Collector Emitter Voltage Vces: -200 mV
• Continuous Collector Current Ic Max: 100 mA
• Current Ic Continuous a Max: 100 mA
• DC Collector Current: -100 mA
• DC Current Gain Min: 120
• DC Current Gain: 120
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 100 MHz
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-666
• Power Dissipation Pd: 300 mW
• Power Dissipation Ptot Max: 300 mW
• Power Dissipation per device Max: 200 mW
• SMD Marking: FF
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-666
• Transistor Polarity: PNP
• Voltage Vcbo: 50 V

RoHS: Yes