Datasheet NTE912 - NTE Electronics TRANSISTOR ARRAY, NPN — Datenblatt

NTE Electronics NTE912

Part Number: NTE912

Detaillierte Beschreibung

Manufacturer: NTE Electronics

Description: TRANSISTOR ARRAY, NPN

Docket:
NTE912 Integrated Circuit General Purpose Transistor Array
(Three Isolated Transistors and One DifferentiallyConnected Transistor Pair) Description: The NTE912 consists of five generalpurpose silicon NPN transistors on a common monolithic substrate in a 14Lead DIP type package.

Two of the transistors are internally connected to form a differentiallyconnected pair. The transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. Features: D Two Matched Pairs of Transistors: VBE matched ±5mV Input Offset Current 2µA Max. @ IC = 1mA D 5 General Purpose Monolithic Transistors D Operation from DC to 120MHz D Wide Operating Current Range D Low Noise Figure: 3.2dB Typ @ 1kHz Applications: D General Use In All Types of Signal

Specifications:

Collector Emitter Voltage V(br)ceo: 24 V
Current Ic Continuous a Max: 50 mA
DC Collector Current: 50 mA
DC Current Gain: 100
Device Marking: NTE912
Gain Bandwidth ft Typ: 550 MHz
Module Configuration: Five
Mounting Type: Radial Leaded
Number of Pins: 14
Number of Transistors: 3
Operating Temperature Range: -55°C to +125°C
Package / Case: DIP
Power Dissipation Pd: 750 mW
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: DIP
Transistor Polarity: NPN

RoHS: Yes

Accessories:

Multicomp - 2227MC-14-03-10-F1