Datasheet SI9934BDY - Vishay MOSFET, DUAL, PP, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, PP, SO-8

Download Data Sheet

Simulation Model

Specifications:

• Continuous Drain Current Id: 4.8 A
• Current Id Max: -4.8 A
• Drain Source Voltage Vds: 12 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 35 MOhm
• On State Resistance @ Vgs = 2.5V: 56 MOhm
• On State Resistance @ Vgs = 4.5V: 35 MOhm
• Operating Temperature Range: -55°C to +150°C
• P Channel Gate Charge: 13nC
• Package / Case: SOIC
• Power Dissipation Pd: 1.1 W
• Pulse Current Idm: 20 A
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -1.4 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: -12 V
• Voltage Vgs Max: -8 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes