Datasheet SI4559EY - Vishay MOSFET, DUAL, NP, SO-8 — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, DUAL, NP, SO-8

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Docket:
Si4559EY
Vishay Siliconix
N-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
VDS (V)

Specifications:

• Cont Current Id N Channel 2: 4.5 A
• Cont Current Id P Channel: 3.1 A
• Continuous Drain Current Id: 3.1 A
• Current Id Max: 4.5 A
• Drain Source Voltage Vds: 60 V
• External Depth: 5.26 mm
• External Length / Height: 1.2 mm
• External Width: 6.2 mm
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 19nC
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 100 MOhm
• On State Resistance @ Vgs = 10V N Channel: 55 MOhm
• On State Resistance @ Vgs = 10V P Channel: 120 MOhm
• On State Resistance @ Vgs = 4.5V N Channel: 75 MOhm
• On State Resistance @ Vgs = 4.5V P Channel: 150 MOhm
• Operating Temperature Range: -55°C to +175°C
• P Channel Gate Charge: 16nC
• Package / Case: SOIC
• Power Dissipation Pd: 2.4 W
• Pulse Current Idm: 30 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel
• Voltage Vds P Channel Max: 60 V
• Voltage Vds: 60 V

RoHS: Yes