Datasheet SI4565ADY-T1-E3 - Vishay MOSFET, N/P, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N/P, SO-8

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Docket:
Si4565ADY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel 40 RDS(on) () 0.039 at VGS = 10 V 0.050 at VGS = 4.5 V 0.054 at VGS = - 10 V 0.072 at VGS = - 4.5 V ID (A)a 6.6 6.6 5.8 - 4.5 9 - 3.9 Qg (Typ.)

Specifications:

• Cont Current Id N Channel: 5.2 A
• Cont Current Id P Channel: 4.5 A
• Current Id Max: 6.6 A
• Drain Source Voltage Vds: 40 V
• Junction Temperature Tj Min: 150°C
• Module Configuration: Dual
• Mounting Type: SMD
• On Resistance Rds(on): 40 MOhm
• On State Resistance @ Vgs = 10V N Channel: 40 MOhm
• On State Resistance @ Vgs = 10V P Channel: 54 MOhm
• On State Resistance @ Vgs = 4.5V N Channel: 45 MOhm
• On State Resistance @ Vgs = 4.5V P Channel: 72 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SO-8
• Power Dissipation N Channel 2: 1.1 W
• Power Dissipation P Channel 2: 1.1 W
• Power Dissipation Pd: 3.1 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2.2 V
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel
• Voltage Vds Typ: 40 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th N Channel 1 Min: 0.6 V
• Voltage Vgs th P Channel Max: 2.2 V
• Voltage Vgs th P Channel Min: 0.8 V

RoHS: Yes

Andere Namen:

SI4565ADYT1E3, SI4565ADY T1 E3