Datasheet SI9926BDY - Vishay MOSFET, DUAL, NN, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, NN, SO-8

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Docket:
Si9926BDY
New Product
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 6.2 A
• Current Id Max: 6.2 A
• Drain Source Voltage Vds: 20 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 11nC
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 20 MOhm
• On State Resistance @ Vgs = 2.5V: 30 MOhm
• On State Resistance @ Vgs = 4.5V: 20 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Packaging Type: Reel
• Power Dissipation Pd: 1.14 W
• Pulse Current Idm: 30 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes