Datasheet SI4966DY - Vishay MOSFET, DUAL, NN, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, NN, SO-8

Specifications:

• Continuous Drain Current Id: 7.2 A
• Current Id Max: 7.1 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• N-channel Gate Charge: 25nC
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 25 MOhm
• On State Resistance @ Vgs = 2.5V: 35 MOhm
• On State Resistance @ Vgs = 4.5V: 25 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 40 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SMD Marking: SI4966DY
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 2.5 V

RoHS: Yes