Datasheet SI7960DP-T1-E3 - Vishay DUAL N CHANNEL MOSFET, 60 V, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL N CHANNEL MOSFET, 60 V, SOIC

Specifications:

• Continuous Drain Current Id: 9.7 A
• Drain Source Voltage Vds: 60 V
• On Resistance Rds(on): 25 MOhm
• Rds(on) Test Voltage Vgs: 20 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI7960DPT1E3, SI7960DP T1 E3