Datasheet SI7958DP-T1-GE3 - Vishay DUAL N CHANNEL MOSFET, 40 V, 11.3 A — Datenblatt

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Manufacturer: Vishay

Description: DUAL N CHANNEL MOSFET, 40 V, 11.3 A

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Docket:
Si7958DP
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.0165 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 11.3 10.3

Specifications:

• Continuous Drain Current Id: 11.3 A
• Drain Source Voltage Vds: 40 V
• On Resistance Rds(on): 20 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI7958DPT1GE3, SI7958DP T1 GE3