Datasheet SI7949DP-T1-E3 - Vishay MOSFET, PP CH, 60 V, 8SOIC — Datenblatt

Vishay SI7949DP-T1-E3

Part Number: SI7949DP-T1-E3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, PP CH, 60 V, 8SOIC

data sheetDownload Data Sheet

Docket:
Si7949DP
Vishay Siliconix
Dual P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 60 RDS(on) () 0.064 at VGS = - 10 V 0.080 at VGS = - 4.5 V ID (A) -5 26 - 4.5 Qg (Typ.)

Specifications:

  • Continuous Drain Current Id: -3.2 A
  • Drain Source Voltage Vds: -60 V
  • Number of Pins: 8
  • On Resistance Rds(on): 0.051 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 1.5 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Transistor Case Style: SOIC PowerPAK
  • Transistor Polarity: Dual P Channel
  • RoHS: Y-Ex

Andere Namen:

SI7949DPT1E3, SI7949DP T1 E3