Datasheet SI6963BDQ-T1-GE3 - Vishay DUAL P CHANNEL MOSFET, -20 V, TSSOP — Datenblatt

Vishay SI6963BDQ-T1-GE3

Part Number: SI6963BDQ-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL P CHANNEL MOSFET, -20 V, TSSOP

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Docket:
Si6963BDQ
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.045 at VGS = - 4.5 V 0.080 at VGS = - 2.5 V ID (A) - 3.9 - 3.0

Specifications:

  • Continuous Drain Current Id: -3.9 A
  • Drain Source Voltage Vds: -20 V
  • On Resistance Rds(on): 80 MOhm
  • Rds(on) Test Voltage Vgs: 12 V
  • Threshold Voltage Vgs Typ: -1.4 V
  • Transistor Polarity: P Channel

RoHS: Y-Ex

Andere Namen:

SI6963BDQT1GE3, SI6963BDQ T1 GE3