Datasheet SI6963BDQ-T1-GE3 - Vishay DUAL P CHANNEL MOSFET, -20 V, TSSOP — Datenblatt
Part Number: SI6963BDQ-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: DUAL P CHANNEL MOSFET, -20 V, TSSOP
Docket:
Si6963BDQ
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.045 at VGS = - 4.5 V 0.080 at VGS = - 2.5 V ID (A) - 3.9 - 3.0
Specifications:
- Continuous Drain Current Id: -3.9 A
- Drain Source Voltage Vds: -20 V
- On Resistance Rds(on): 80 MOhm
- Rds(on) Test Voltage Vgs: 12 V
- Threshold Voltage Vgs Typ: -1.4 V
- Transistor Polarity: P Channel
RoHS: Y-Ex
Andere Namen:
SI6963BDQT1GE3, SI6963BDQ T1 GE3