Datasheet SI4952DY-T1-GE3 - Vishay DUAL N CHANNEL MOSFET, 25 V, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL N CHANNEL MOSFET, 25 V, SOIC

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Docket:
Si4952DY
Vishay Siliconix
Dual N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 25 RDS(on) () 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a 8 5.5 nC 8 Qg (Typ.)

Simulation Model

Specifications:

• Continuous Drain Current Id: 8 A
• Drain Source Voltage Vds: 25 V
• On Resistance Rds(on): 28 MOhm
• Rds(on) Test Voltage Vgs: 16 V
• Threshold Voltage Vgs Typ: 2.2 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI4952DYT1GE3, SI4952DY T1 GE3