Datasheet SI4943BDY-T1-GE3 - Vishay DUAL P CHANNEL MOSFET, -20 V, 8.4 A — Datenblatt

Vishay SI4943BDY-T1-GE3

Part Number: SI4943BDY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL P CHANNEL MOSFET, -20 V, 8.4 A

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Docket:
Si4943BDY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.019 at VGS = - 10 V 0.031 at VGS = - 4.5 V ID (A) - 8.4 - 6.7

Specifications:

  • Continuous Drain Current Id: -8.4 A
  • Drain Source Voltage Vds: -20 V
  • On Resistance Rds(on): 19 MOhm
  • Rds(on) Test Voltage Vgs: -10 V
  • Threshold Voltage Vgs Typ: -1 V
  • Transistor Polarity: P Channel

RoHS: Y-Ex

Andere Namen:

SI4943BDYT1GE3, SI4943BDY T1 GE3