Datasheet SI4922BDY-T1-GE3 - Vishay DUAL N CHANNEL MOSFET, 30 V, 8 A — Datenblatt

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Manufacturer: Vishay

Description: DUAL N CHANNEL MOSFET, 30 V, 8 A

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Docket:
Si4922BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.016 at VGS = 10 V 30 0.018 at VGS = 4.5 V 0.024 at VGS = 2.5 V ID (A)a, e 8 8 8 19 Qg (Typ.)

Specifications:

• Continuous Drain Current Id: 8 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 24 MOhm
• Rds(on) Test Voltage Vgs: 2.5 V
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI4922BDYT1GE3, SI4922BDY T1 GE3