Datasheet SI4914BDY-T1-E3 - Vishay DUAL N CHANNEL MOSFET, 30 V, SOIC — Datenblatt

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Manufacturer: Vishay

Description: DUAL N CHANNEL MOSFET, 30 V, SOIC

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Docket:
Si4914BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) Channel-1 30 Channel-2 RDS(on) () 0.021 at VGS = 10 V 0.027 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a Qg (Typ.) 8.4 7.4 8d 8d 6.7

Specifications:

• Continuous Drain Current Id: 7.4 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 16.5 MOhm
• Rds(on) Test Voltage Vgs: 20 V
• Threshold Voltage Vgs Typ: 2.7 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI4914BDYT1E3, SI4914BDY T1 E3