Datasheet SI4906DY-T1-E3 - Vishay DUAL N CHANNEL MOSFET, 40 V, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL N CHANNEL MOSFET, 40 V, SOIC

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Docket:
Si4906DY
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
FEATURES
ID (A)a 6.6 5.8 Qg (Typ.) 6.6

Simulation Model

Specifications:

• Continuous Drain Current, Id: 6.6 A
• Drain Source Voltage, Vds: 40 V
• On Resistance, Rds(on): 0.05 Ohm
• Rds(on) Test Voltage, Vgs: 16 V
• Threshold Voltage, Vgs Typ: 2.2 V
• Transistor Polarity: Dual N Channel

RoHS: Y-Ex

Andere Namen:

SI4906DYT1E3, SI4906DY T1 E3