Datasheet SI4562DY-T1-E3 - Vishay DUAL N/P CHANNEL MOSFET, 20 V, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL N/P CHANNEL MOSFET, 20 V, SOIC

Simulation Model

Specifications:

• Continuous Drain Current Id: 7.1 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 19 MOhm
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 600 mV
• Transistor Polarity: N and P Channel

RoHS: Yes

Andere Namen:

SI4562DYT1E3, SI4562DY T1 E3